DMN10H170SVT-13

DMN10H170SVT-13

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DMN10H170SVT-13
Описание:
MOSFET N-CH 100V 2.6A TSOT26
Упаковка:
Tape & Reel (TR)
Datasheet:
DMN10H170SVT-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMN10H170SVT-13
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:d78e99a3956137307cd501d0ce36fdb8
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:df57ada7017062dcacc72165f6d76b9e
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:142127fb345ef5945901094cf3edc1a1
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:b5f36d6e61c87033c85326d146d03dfb
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0bce831b557cf7effae31cda0604de99
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:2f2da33e88da03c582ee6095b445156e
Package / Case:0be095bf904b063006f66328288b68f9
In Stock: 0
Stock:
0 Can Ship Immediately
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