DMN2013UFDE-7

DMN2013UFDE-7

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DMN2013UFDE-7
Описание:
MOSFET N-CH 20V 10.5A 6UDFN
Упаковка:
Tape & Reel (TR)
Datasheet:
DMN2013UFDE-7 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMN2013UFDE-7
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:41c889ab4988a3461b87e50df98e1e9c
Drive Voltage (Max Rds On, Min Rds On):c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:4d60dbd1a0754154717af87c8f31f63b
Vgs(th) (Max) @ Id:a209081fc9e80668dd6ffb499d3c9fcb
Gate Charge (Qg) (Max) @ Vgs:afb8b80475f2eee7cac57590c3e69d44
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:f361f7edff5927f90ecaec9a18cbcbf9
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):18f5d03a0c08861ce32d3cda48539f26
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:0d1a653ddda3c806452bfe0c6f3af0f3
Package / Case:e81d8b9cfb71d523a4585d1e856b85a6
In Stock: 0
Stock:
0 Can Ship Immediately
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