DMN2024UTS-13

DMN2024UTS-13

Images are for reference only
See Product Specifications

DMN2024UTS-13
Описание:
MOSFET BVDSS: 8V-24V TSSOP-8 T&R
Упаковка:
Tape & Reel (TR)
Datasheet:
DMN2024UTS-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMN2024UTS-13
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:2b5689f57c402bfbecf4b1f4e5ad8759
FET Feature:eb6d8ae6f20283755b339c0dc273988b
Drain to Source Voltage (Vdss):c828a77388b77eed02df2bdc48ce88f8
Current - Continuous Drain (Id) @ 25°C:0c6745afd9a8a9c65cc4fb3a156d24a3
Rds On (Max) @ Id, Vgs:9647f422cf5f22922ca3c3acf929c681
Vgs(th) (Max) @ Id:1ea93de703116d58049e22f5a98960d1
Gate Charge (Qg) (Max) @ Vgs:33504c452843b7237e031743d1cc882e
Input Capacitance (Ciss) (Max) @ Vds:6097b92873dfa8a6be612369404e6494
Power - Max:e39ba0cecec4625320aacee07ea6ad07
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:e03a7a6d310a992f91d9ce6fc79d28ea
Supplier Device Package:c7e6aa666302fa20c9ece91146965468
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
PJT7002H_R1_00001
PJT7002H_R1_00001
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
FDMS5361L
FDMS5361L
Fairchild Semiconductor
N-CHANNEL 60V 35A POWER MOSFET
EPC2105
EPC2105
EPC
GAN TRANS ASYMMETRICAL HALF BRID
BSO220N03MDGXUMA1
BSO220N03MDGXUMA1
Infineon Technologies
MOSFET 2N-CH 30V 6A 8DSO
AUIRF7313QTR
AUIRF7313QTR
Infineon Technologies
MOSFET 2N-CH 30V 6.9A 8SO
TSM076NH04LDCR RLG
TSM076NH04LDCR RLG
Taiwan Semiconductor Corporation
40V, 34A, DUAL N-CHANNEL POWER M
DMN3032LFDBQ-13
DMN3032LFDBQ-13
Diodes Incorporated
MOSFET 2NCH 30V 6.2A UDFN2020
SMA5125
SMA5125
Sanken
MOSFET 3N/3P-CH 60V 10A 12-SIP
ALD110804PCL
ALD110804PCL
Advanced Linear Devices Inc.
MOSFET 4N-CH 10.6V 16DIP
ALD210804SCL
ALD210804SCL
Advanced Linear Devices Inc.
MOSFET 4N-CH 10.6V 0.08A 16SOIC
MKE38P600TLB
MKE38P600TLB
IXYS
MOSFET N-CH
BSM400D12P3G002
BSM400D12P3G002
Rohm Semiconductor
1200V, 358A, HALF BRIDGE, FULL S
Вас также может заинтересовать
FK3330013
FK3330013
Diodes Incorporated
XTAL OSC XO 33.333333MHZ CMOS
FK6660021
FK6660021
Diodes Incorporated
XTAL OSC XO 66.6600MHZ CMOS
S1613A-40.0000(T)
S1613A-40.0000(T)
Diodes Incorporated
XTAL OSC XO 40.0000MHZ LVCMOS
FDC500004
FDC500004
Diodes Incorporated
XTAL OSC XO SMD
AP63357QZV-EVM
AP63357QZV-EVM
Diodes Incorporated
EVAL BOARD FOR AP63357Q
AP22815BWT-EVM
AP22815BWT-EVM
Diodes Incorporated
LOAD SWITCH EVAL
SBRT4U45LP-7
SBRT4U45LP-7
Diodes Incorporated
DIODE SBR 45V 4A 2DFN
DMC1030UFDBQ-13
DMC1030UFDBQ-13
Diodes Incorporated
MOSFET N/P-CH 12V 5.1A UDFN2020
DMPH6250S-7
DMPH6250S-7
Diodes Incorporated
MOSFET P-CH 60V 2.4A SOT23
ZXMN3B04N8TC
ZXMN3B04N8TC
Diodes Incorporated
MOSFET N-CH 30V 7.2A 8SO
PT7C5027C1-5UWF
PT7C5027C1-5UWF
Diodes Incorporated
SALEABLE WAFER XO CLOCK 0.5UM_CM
74LVC1G125QW5-7
74LVC1G125QW5-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT25