DMN2310UFB4-7B

DMN2310UFB4-7B

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DMN2310UFB4-7B
Описание:
MOSFET BVDSS: 8V~24V X2-DFN1006-
Упаковка:
Tape & Reel (TR)
Datasheet:
DMN2310UFB4-7B Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMN2310UFB4-7B
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:4c4b42bde7c74862496f0544f03d7def
Drive Voltage (Max Rds On, Min Rds On):c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:faf5380ad91118254d034e73b0c4fb63
Vgs(th) (Max) @ Id:1ea93de703116d58049e22f5a98960d1
Gate Charge (Qg) (Max) @ Vgs:e2c6fab33775a87e0f8eafa4f53201cb
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:269bb712cff90041a0bf1decd4257ee0
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):179f24bf8ca5d8cca0962b2cc2bba80a
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:9ac41eecbc4e00e98b310b07c9c28b1f
Package / Case:fd0564f405b2eae0543f45927c1efab9
In Stock: 0
Stock:
0 Can Ship Immediately
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