DMN2991UFO-7B

DMN2991UFO-7B

Images are for reference only
See Product Specifications

DMN2991UFO-7B
Описание:
MOSFET BVDSS: 8V~24V X2-DFN0604-
Упаковка:
Tape & Reel (TR)
Datasheet:
DMN2991UFO-7B Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMN2991UFO-7B
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:b05c8d3ef5793a242e9228aa6d05cca3
Drive Voltage (Max Rds On, Min Rds On):c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:b66a10a8cb24afbc6f0801c8d86f5436
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:9104c1b58b9a0ca3d273e83a6fbfab99
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:740ac81da80664c23f6b033d13fbecfe
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):f98bd9d5fb251fdbf3b01b9459fce1a0
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:1241a7943a982af77da9d0afc3694e63
Package / Case:fd0564f405b2eae0543f45927c1efab9
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RJK03J4DPA-00#J5A
RJK03J4DPA-00#J5A
Renesas Electronics America Inc
N-CHANNEL POWER SWITCHING MOSFET
IXFK120N20P
IXFK120N20P
IXYS
MOSFET N-CH 200V 120A TO264AA
PSMN3R9-60XS127
PSMN3R9-60XS127
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR
DMNH10H021SPSW-13
DMNH10H021SPSW-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
IXTP14N60PM
IXTP14N60PM
IXYS
MOSFET N-CH 600V 7A TO220
IRFI9610G
IRFI9610G
Vishay Siliconix
MOSFET P-CH 200V 2A TO220-3
IRFU020PBF
IRFU020PBF
Vishay Siliconix
MOSFET N-CH 60V 14A TO251AA
IRF630NSTRRPBF
IRF630NSTRRPBF
Infineon Technologies
MOSFET N-CH 200V 9.3A D2PAK
IRF6215LPBF
IRF6215LPBF
Infineon Technologies
MOSFET P-CH 150V 13A TO262
2SK3128(Q)
2SK3128(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 60A TO3P
IPD60R600CPATMA1
IPD60R600CPATMA1
Infineon Technologies
MOSFET N-CH 600V 6.1A TO252-3
SLC3012CMX
SLC3012CMX
onsemi
MOSFET N-CH
Вас также может заинтересовать
FN1840018
FN1840018
Diodes Incorporated
XTAL OSC XO 18.4320MHZ CMOS SMD
FN2000091
FN2000091
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
PB0000002
PB0000002
Diodes Incorporated
DIODE
SDM2U20SD3-7
SDM2U20SD3-7
Diodes Incorporated
DIODE SCHOTTKY 20V 2A SOD323
AZ23C9V1-7-F
AZ23C9V1-7-F
Diodes Incorporated
DIODE ZENER ARRAY 9.1V SOT23-3
FZT949TC
FZT949TC
Diodes Incorporated
TRANS PNP 30V 5.5A SOT223-3
DMG3420UQ-7
DMG3420UQ-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT23 T&R 3
PI6C2501WE
PI6C2501WE
Diodes Incorporated
IC PLL CLOCK DRIVER 8-SOIC
PI74VCX16245AEX
PI74VCX16245AEX
Diodes Incorporated
IC TXRX NON-INVERT 3.6V 48TSSOP
PAM3104BKJA
PAM3104BKJA
Diodes Incorporated
IC INTEGRATED CIRCUIT
AP7361C-28D-13
AP7361C-28D-13
Diodes Incorporated
IC REG LINEAR 2.8V 1A TO252
ZMT31TC
ZMT31TC
Diodes Incorporated
SENSOR ANGLE 360DEG SMD