DMN2991UFZ-7B

DMN2991UFZ-7B

Images are for reference only
See Product Specifications

DMN2991UFZ-7B
Описание:
MOSFET N-CH 20V 550MA 3DFN
Упаковка:
Tape & Reel (TR)
Datasheet:
DMN2991UFZ-7B Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMN2991UFZ-7B
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:01529edbc3394a5a8f6ca2d5cb22aa17
Drive Voltage (Max Rds On, Min Rds On):2a209c50c2dd1678cb3d568dbbce6592
Rds On (Max) @ Id, Vgs:b66a10a8cb24afbc6f0801c8d86f5436
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:9104c1b58b9a0ca3d273e83a6fbfab99
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:178546137ab2034cfe1a591b9c7c8214
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9d19056357c03c480f40182bbda004ee
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:b1c9bfafb09a410ec436acc62b60cfd0
Package / Case:fd0564f405b2eae0543f45927c1efab9
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
2SK3306B-S17-AY
2SK3306B-S17-AY
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IMZA65R030M1HXKSA1
IMZA65R030M1HXKSA1
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
FQB5N50CTM
FQB5N50CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 5
FQPF8N90C
FQPF8N90C
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 6
SISA40DN-T1-GE3
SISA40DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 43.7A/162A PPAK
SI4850BDY-T1-GE3
SI4850BDY-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 8.4A/11.3A 8SO
BTS282ZE3180AATMA1
BTS282ZE3180AATMA1
Infineon Technologies
N-CHANNEL POWER MOSFET
IRLR3103TRR
IRLR3103TRR
Infineon Technologies
MOSFET N-CH 30V 55A DPAK
MTB23P06VT4
MTB23P06VT4
onsemi
MOSFET P-CH 60V 23A D2PAK
IRFB59N10DPBF
IRFB59N10DPBF
Infineon Technologies
MOSFET N-CH 100V 59A TO220AB
IRF3707ZSTRRP
IRF3707ZSTRRP
Infineon Technologies
MOSFET N-CH 30V 59A D2PAK
RS1E321GNTB1
RS1E321GNTB1
Rohm Semiconductor
MOSFET N-CH 30V 32A/80A 8HSOP
Вас также может заинтересовать
SMAJ7.5AQ-13-F
SMAJ7.5AQ-13-F
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMA
DM8W18A-13
DM8W18A-13
Diodes Incorporated
TVS DIODE 18VWM 29.2VC DO218
FK2700016
FK2700016
Diodes Incorporated
XTAL OSC XO 27.0000MHZ CMOS SMD
SNF550018
SNF550018
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
AP7370-33Y-13-EVM
AP7370-33Y-13-EVM
Diodes Incorporated
EVAL BOARD FOR AP7370
ZHCS1006TC
ZHCS1006TC
Diodes Incorporated
DIODE SCHOTTKY 60V 900MA SOT23-3
DMN4035L-7
DMN4035L-7
Diodes Incorporated
MOSFET N-CH 40V 4.6A SOT23
DMTH8008LFGQ-13
DMTH8008LFGQ-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI33
PI3LVD400ZFE
PI3LVD400ZFE
Diodes Incorporated
IC SWITCH DUAL LVDS 56TQFN
ZXGD3006E6QTA
ZXGD3006E6QTA
Diodes Incorporated
IC GATE DRVR LOW-SIDE SOT26
AL1692L-30B1S7-13
AL1692L-30B1S7-13
Diodes Incorporated
IC LED DRIVER OFFL TRIAC 3A 7SO
AP2171MPG-13
AP2171MPG-13
Diodes Incorporated
IC PWR SWITCH P-CHAN 1:1 8MSOP