DMN3013LDG-13

DMN3013LDG-13

Images are for reference only
See Product Specifications

DMN3013LDG-13
Описание:
MOSFET BVDSS: 25V-30V POWERDI333
Упаковка:
Tape & Reel (TR)
Datasheet:
DMN3013LDG-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMN3013LDG-13
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:2b5689f57c402bfbecf4b1f4e5ad8759
FET Feature:eb6d8ae6f20283755b339c0dc273988b
Drain to Source Voltage (Vdss):9ec92e92d0efca44e7ef022a61c49068
Current - Continuous Drain (Id) @ 25°C:5e4c3579127061e87a5edb7b6e68a2e7
Rds On (Max) @ Id, Vgs:59ac72fc0c774c8b2e664614a0183366
Vgs(th) (Max) @ Id:b84520e401b6763187bb539da6d1dfbf
Gate Charge (Qg) (Max) @ Vgs:12ea05be9665effe96479faec34d687e
Input Capacitance (Ciss) (Max) @ Vds:4a1259fc82303a41233ab927c96d0809
Power - Max:9ed742e88c3c37bd56ef8f127e1de68a
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:e771faa948f6e9d3932873ffc2b5e24e
Supplier Device Package:a4bd92629dbec6a34a02f3b2b8f93785
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
6HN04SS-TL-H
6HN04SS-TL-H
Sanyo
N-CHANNEL MOSFET
FDS3601
FDS3601
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
SI4214DDY-T1-GE3
SI4214DDY-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 30V 8.5A 8-SOIC
IAUC45N04S6N070HATMA1
IAUC45N04S6N070HATMA1
Infineon Technologies
IAUC45N04S6N070HATMA1
SQJB42EP-T1_GE3
SQJB42EP-T1_GE3
Vishay Siliconix
MOSFET 2 N-CH 40V POWERPAK SO8
IRF620R4587
IRF620R4587
Harris Corporation
5.0A 200V 0.800 OHM N-CHANNEL
SSM6P35AFU,LF
SSM6P35AFU,LF
Toshiba Semiconductor and Storage
SMALL SIGNAL MOSFET P-CH X 2 VDS
IRF7756
IRF7756
Infineon Technologies
MOSFET 2P-CH 12V 4.3A 8-TSSOP
AO4946
AO4946
Alpha & Omega Semiconductor Inc.
MOSFET 2N-CH 30V 8.6A 8-SOIC
CSD75301W1015
CSD75301W1015
Texas Instruments
MOSFET 2P-CH 20V 1.2A 6DSBGA
APTC90TAM60TPG
APTC90TAM60TPG
Microsemi Corporation
MOSFET 6N-CH 900V 59A SP6-P
MCH6602-TL-E
MCH6602-TL-E
onsemi
MOSFET 2N-CH 30V 0.35A MCPH6
Вас также может заинтересовать
PSMAJ400CA-13
PSMAJ400CA-13
Diodes Incorporated
TVS DIODE 342VWM 548VC SMA
SMF4L24AQ-7
SMF4L24AQ-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
FY1430046
FY1430046
Diodes Incorporated
CRYSTAL 14.3180MHZ 20PF SMD
NX7021E0150.000000
NX7021E0150.000000
Diodes Incorporated
XTAL OSC XO 150.0000MHZ LVPECL
RS2M-13
RS2M-13
Diodes Incorporated
DIODE GEN PURP 1KV 1.5A SMB
APD260VDTR-G1
APD260VDTR-G1
Diodes Incorporated
DIODE SCHOTTKY 60V 2A DO41
BZX84C2V7-7-F
BZX84C2V7-7-F
Diodes Incorporated
DIODE ZENER 2.7V 300MW SOT23-3
DDTC123YKA-7-F
DDTC123YKA-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SC59-3
DMN2024UFX-7
DMN2024UFX-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V V-DFN2050-4
PI6LC48H02-01LIE
PI6LC48H02-01LIE
Diodes Incorporated
IC CLOCK GENERATOR 16TSSOP
AP7343-09FS4-7B
AP7343-09FS4-7B
Diodes Incorporated
IC REG LINEAR 0.9V 300MA 4DFN
AP7345D-1218RH4-7
AP7345D-1218RH4-7
Diodes Incorporated
IC REG LIN 1.2V/1.8V 300MA 8DFN