DMT10H4M5LPS-13

DMT10H4M5LPS-13

Images are for reference only
See Product Specifications

DMT10H4M5LPS-13
Описание:
MOSFET BVDSS: 61V-100V POWERDI50
Упаковка:
Tape & Reel (TR)
Datasheet:
DMT10H4M5LPS-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMT10H4M5LPS-13
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RJK0396DPA-00#J53
RJK0396DPA-00#J53
Renesas Electronics America Inc
MOSFET N-CH 30V 30A 8WPAK
IPB22N03S4L-15ATMA1
IPB22N03S4L-15ATMA1
Infineon Technologies
N-CHANNEL POWER MOSFET
TPIC5421LNE
TPIC5421LNE
Texas Instruments
N-CHANNEL POWER MOSFET
FQI4N90TU
FQI4N90TU
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 4
SI7155DP-T1-GE3
SI7155DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 40V 31A/100A PPAK
TK33S10N1L,LXHQ
TK33S10N1L,LXHQ
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 33A DPAK
SIRS700DP-T1-GE3
SIRS700DP-T1-GE3
Vishay Siliconix
N-CHANNEL 100 V (D-S) MOSFET POW
STP23N80K5
STP23N80K5
STMicroelectronics
MOSFET N-CH 800V 16A TO220-3
APTC60DAM18CTG
APTC60DAM18CTG
Microchip Technology
MOSFET N-CH 600V 143A SP4
FDME410NZT
FDME410NZT
onsemi
MOSFET N-CH 20V 7A MICROFET
TPCA8057-H,LQ(M
TPCA8057-H,LQ(M
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 42A 8SOP
IPC60R3K3C6X1SA1
IPC60R3K3C6X1SA1
Infineon Technologies
MOSFET N-CH BARE DIE
Вас также может заинтересовать
FL2700057
FL2700057
Diodes Incorporated
CRYSTAL 27.0000MHZ 18PF SMD
FH4000020
FH4000020
Diodes Incorporated
CRYSTAL 40.0000MHZ 15PF SMD
NX7011E0156.250000
NX7011E0156.250000
Diodes Incorporated
IC
SK16-13-F
SK16-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 1A SMB
SMAZ30-13-F
SMAZ30-13-F
Diodes Incorporated
DIODE ZENER 30V 1W SMA
DMN6040SVT-7
DMN6040SVT-7
Diodes Incorporated
MOSFET N CH 60V 5A TSOT26
ZXMN3A02X8TA
ZXMN3A02X8TA
Diodes Incorporated
MOSFET N-CH 30V 5.3A 8MSOP
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
PI5V330SE
PI5V330SE
Diodes Incorporated
IC VIDEO MUX/DEMUX 2X1 16SOIC
AP9214LA-AJ-HSB-7
AP9214LA-AJ-HSB-7
Diodes Incorporated
IC BATT PROT LI-ION 1CELL 6UDFN
ZLPM1003X10TC
ZLPM1003X10TC
Diodes Incorporated
IC REG
AP2205-33YR-13
AP2205-33YR-13
Diodes Incorporated
IC REG LINEAR 3.3V 250MA SOT89-3