DMT10H9M9SSS-13

DMT10H9M9SSS-13

Images are for reference only
See Product Specifications

DMT10H9M9SSS-13
Описание:
MOSFET BVDSS: 61V~100V SO-8 T&R
Упаковка:
Tape & Reel (TR)
Datasheet:
DMT10H9M9SSS-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMT10H9M9SSS-13
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
DMP3028LFDE-13
DMP3028LFDE-13
Diodes Incorporated
MOSFET P-CH 30V 6.8A 6UDFN
SSR1N60BTM-WS
SSR1N60BTM-WS
Fairchild Semiconductor
MOSFET N-CH 600V 900MA DPAK
2SK1093-E
2SK1093-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
SI1013X-T1-GE3
SI1013X-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 350MA SC89-3
AOD600A60
AOD600A60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 8A TO252
CSD19538Q2T
CSD19538Q2T
Texas Instruments
MOSFET N-CH 100V 13.1A 6WSON
TK100A10N1,S4X
TK100A10N1,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 100A TO220SIS
2SJ327-Z-AZ
2SJ327-Z-AZ
Renesas Electronics America Inc
P-CHANNEL SMALL SIGNAL MOSFET
IAUA210N10S5N024AUMA1
IAUA210N10S5N024AUMA1
Infineon Technologies
MOSFET_(75V 120V( PG-HSOF-5
2N6849
2N6849
Microsemi Corporation
MOSFET P-CH 100V 6.5A TO39
2SJ438(AISIN,Q,M)
2SJ438(AISIN,Q,M)
Toshiba Semiconductor and Storage
MOSFET P-CH TO220NIS
AO3451
AO3451
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4A SOT23-3
Вас также может заинтересовать
SMF4L28AQ-7
SMF4L28AQ-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
FH4800031Q
FH4800031Q
Diodes Incorporated
CRYSTAL 48.0000MHZ 10PF SMD
FL2000161Q
FL2000161Q
Diodes Incorporated
CRYSTAL 20.0000MHZ 10PF SMD
FKD330004
FKD330004
Diodes Incorporated
XTAL OSC XO 133.3300MHZ CMOS SMD
N6270D
N6270D
Diodes Incorporated
DIODE
AZ23C4V3-7-F
AZ23C4V3-7-F
Diodes Incorporated
DIODE ZENER ARRAY 4.3V SOT23-3
DZ9F20S92-7
DZ9F20S92-7
Diodes Incorporated
DIODE ZENER 20V 200MW SOD923
1SMB5916B-13
1SMB5916B-13
Diodes Incorporated
DIODE ZENER 4.3V 550MW SMB
DCX114EUQ-13-F
DCX114EUQ-13-F
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 10
DMN6068LK3-13
DMN6068LK3-13
Diodes Incorporated
MOSFET N-CH 60V 6A TO252-3
74LVC1G08FZ4-7
74LVC1G08FZ4-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1410-6
ZLPM8011JB20TC
ZLPM8011JB20TC
Diodes Incorporated
IC PWR MNGMT QUAD LNB QFN4040-20