DMT3006LDV-13

DMT3006LDV-13

Images are for reference only
See Product Specifications

DMT3006LDV-13
Описание:
MOSFET BVDSS: 25V 30V POWERDI333
Упаковка:
Tape & Reel (TR)
Datasheet:
DMT3006LDV-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMT3006LDV-13
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
Power - Max:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
TQM110NB04DCR RLG
TQM110NB04DCR RLG
Taiwan Semiconductor Corporation
40V, 50A, DUAL N-CHANNEL POWER M
FS50KM-2-J1#E51
FS50KM-2-J1#E51
Renesas Electronics America Inc
DISCRETE / POWER MOSFET
SSM6N16FUTE85LF
SSM6N16FUTE85LF
Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 0.1A US6
ZXMN6A25DN8TA
ZXMN6A25DN8TA
Diodes Incorporated
MOSFET 2N-CH 60V 3.8A 8-SOIC
BUK7K29-100EX
BUK7K29-100EX
Nexperia USA Inc.
MOSFET 2N-CH 100V 29.5A LFPAK56
DMT3020LDV-7
DMT3020LDV-7
Diodes Incorporated
MOSFET BVDSS: 25V-30V POWERDI333
SSM6N39TU,LF
SSM6N39TU,LF
Toshiba Semiconductor and Storage
MOSFET 2 N-CHANNEL 20V 1.6A UF6
AOD603A
AOD603A
Alpha & Omega Semiconductor Inc.
MOSFET N/P-CH 60V TO252-4L
APTM20HM20FTG
APTM20HM20FTG
Microchip Technology
MOSFET 4N-CH 200V 89A SP4
BSD235C L6327
BSD235C L6327
Infineon Technologies
MOSFET N/P-CH 20V SOT-363
QJD1210SA2
QJD1210SA2
Powerex Inc.
MOSFET 2N-CH 1200V 100A SIC
SP8K31TB1
SP8K31TB1
Rohm Semiconductor
MOSFET 2N-CH 60V 3.5A 8SOIC
Вас также может заинтересовать
FJ2500004
FJ2500004
Diodes Incorporated
XTAL OSC XO 25.0000MHZ CMOS SMD
BAW56DW-7-F
BAW56DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
SDT20A120CT
SDT20A120CT
Diodes Incorporated
DIODE SCHOTTKY 120V 10A TO220AB
FCX591TA
FCX591TA
Diodes Incorporated
TRANS PNP 60V 1A SOT89-3
DMC1028UFDB-7
DMC1028UFDB-7
Diodes Incorporated
MOSFET N/P-CH 12V/20V 6UDFN
DMG3407SSN-7
DMG3407SSN-7
Diodes Incorporated
MOSFET P-CH 30V 4A SC59
PI5L102LE
PI5L102LE
Diodes Incorporated
IC HOT SWAP PULL-UP SW 20-TSSOP
PI7C8150BMAIE
PI7C8150BMAIE
Diodes Incorporated
IC INTFACE SPECIALIZED 208FQFP
AP3843GUP-G1
AP3843GUP-G1
Diodes Incorporated
IC OFFLINE SWITCH 8DIP
PT7M7812STBE
PT7M7812STBE
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT143-4
AP2205-28W5-7
AP2205-28W5-7
Diodes Incorporated
IC REG LINEAR 2.8V 250MA SOT25
PT7M8216B33XYE
PT7M8216B33XYE
Diodes Incorporated
IC REG LINEAR 3.3V 300MA 4UDFN