DMTH10H010LCTB-13

DMTH10H010LCTB-13

Images are for reference only
See Product Specifications

DMTH10H010LCTB-13
Описание:
MOSFET N-CH 100V 108A TO220AB
Упаковка:
Tape & Reel (TR)
Datasheet:
DMTH10H010LCTB-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMTH10H010LCTB-13
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:55792e1c92978935ae4a40401fa0d8ca
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:b0ab7372523a1d4232552a43981e06fa
Vgs(th) (Max) @ Id:54e5d6e67176a5b9df661d089760961f
Gate Charge (Qg) (Max) @ Vgs:7f3bd2a7f241e93bfadb512b5db4ad56
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:e0f094cc497b5b7a21f2be18cb71e761
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):f1de090f589f42db40fed2c28c353b0f
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:9b3b590b14408ced9e56cc56696084a1
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
PJC138L_R1_00001
PJC138L_R1_00001
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
FDMS7670AS
FDMS7670AS
onsemi
MOSFET N-CH 30V 22A/42A 8PQFN
IPB60R120P7ATMA1
IPB60R120P7ATMA1
Infineon Technologies
MOSFET N-CH 650V 26A D2PAK
LSIC1MO170E0750
LSIC1MO170E0750
Littelfuse Inc.
SICFET N-CH 1700V 750OHM TO247-3
PJL9422_R2_00001
PJL9422_R2_00001
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
N0436N-ZK-E1-AY
N0436N-ZK-E1-AY
Renesas Electronics America Inc
ABU / MOSFET
FDB3652-F085
FDB3652-F085
onsemi
N-CHANNEL POWERTRENCH MOSFET, 10
PHD36N03LT,118
PHD36N03LT,118
NXP USA Inc.
MOSFET N-CH 30V 43.4A DPAK
PMV30UN,215
PMV30UN,215
NXP USA Inc.
MOSFET N-CH 20V 5.7A TO236AB
SIB417DK-T1-GE3
SIB417DK-T1-GE3
Vishay Siliconix
MOSFET P-CH 8V 9A PPAK SC75-6
BSC152N10NSFGATMA1
BSC152N10NSFGATMA1
Infineon Technologies
MOSFET N-CH 100V 9.4A/63A TDSON
Вас также может заинтересовать
MMBZ33VALQ-7-F
MMBZ33VALQ-7-F
Diodes Incorporated
IC TRANSISTOR ARRAY SMD
S1613AA-25.0012
S1613AA-25.0012
Diodes Incorporated
OSCILLATOR CRYSTAL
SDM1M40LP8-7
SDM1M40LP8-7
Diodes Incorporated
DIODE SCHOTTKY 40V 1A 2DFN
UF3007-T
UF3007-T
Diodes Incorporated
DIODE GEN PURP 1KV 3A DO201AD
DFLZ62-7
DFLZ62-7
Diodes Incorporated
DIODE ZENER 1W POWERDI123
DDTA114TUA-7-F
DDTA114TUA-7-F
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT323
DMT6018LDR-7
DMT6018LDR-7
Diodes Incorporated
MOSFET BVDSS: 41V 60V V-DFN3030-
DMT31M7LSS-13
DMT31M7LSS-13
Diodes Incorporated
MOSFET BVDSS: 25V~30V SO-8 T&R 2
AP358SG-13
AP358SG-13
Diodes Incorporated
IC OPAMP GP 2 CIRCUIT 8SOP
PI74FCT16244TVE
PI74FCT16244TVE
Diodes Incorporated
IC BUF NON-INVERT 5.5V 48SSOP
ZRT025GA1TC
ZRT025GA1TC
Diodes Incorporated
IC VREF SHUNT 1% SOT223
AP2127N-2.5TRG1
AP2127N-2.5TRG1
Diodes Incorporated
IC REG LINEAR 2.5V 300MA SOT23