FES1DEQ-7

FES1DEQ-7

Images are for reference only
See Product Specifications

FES1DEQ-7
Описание:
FRED GPP RECTIFIER DO-219AA T&R
Упаковка:
Tape & Reel (TR)
Datasheet:
FES1DEQ-7 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:FES1DEQ-7
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b86aa01bc1f9484a191794819edcfc06
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:8cf85f1fd03e75c994e8e419b6728dfa
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):a2ae0914ecb8ec833e13c1365b306a6e
Current - Reverse Leakage @ Vr:f09d9fa82484a18e018c4f4aa84cdd0b
Capacitance @ Vr, F:01f46cbfc6091c6578b8e77fd9fce1ab
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:3c492bf6853de7a6a5f1669f2f47d221
Supplier Device Package:3c492bf6853de7a6a5f1669f2f47d221
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BYW56-TR
BYW56-TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1000V 2A SOD57
BAV19W-E3-18
BAV19W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 250MA SOD123
ES1D-M3/5AT
ES1D-M3/5AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO214AC
JANTX1N6623/TR
JANTX1N6623/TR
Microchip Technology
RECTIFIER UFR,FRR
VS-T85HF20
VS-T85HF20
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 85A D-55
DGS20-018AS
DGS20-018AS
IXYS
DIODE SCHOTTKY 180V 23A TO263AB
VI30120SGHM3/4W
VI30120SGHM3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30A 120V TO-262AA
VS-20TT100
VS-20TT100
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A TO-220
FR153GHR0G
FR153GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
RS1ML M2G
RS1ML M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800MA SUB SMA
S1AHM2G
S1AHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AC
RBS2MM40BTR
RBS2MM40BTR
Rohm Semiconductor
RBS2MM40B IS SUPER LOW VF
Вас также может заинтересовать
MMBZ27VAL-7
MMBZ27VAL-7
Diodes Incorporated
TVS DIODE 22VWM 40VC SOT23
FD5670001
FD5670001
Diodes Incorporated
XTAL OSC XO 56.7500MHZ CMOS SMD
F51600005
F51600005
Diodes Incorporated
XO OSCILLATOR SMD
MB352W
MB352W
Diodes Incorporated
BRIDGE RECT 1PHASE 200V 35A MB-W
DSR8U600
DSR8U600
Diodes Incorporated
DIODE GEN PURP 600V 8A TO220AC
MMSZ5230B-7-F
MMSZ5230B-7-F
Diodes Incorporated
DIODE ZENER 4.7V 500MW SOD123
DCX114TU-7-F
DCX114TU-7-F
Diodes Incorporated
TRANS PREBIAS NPN/PNP SOT363
DMP2033UCB9-7
DMP2033UCB9-7
Diodes Incorporated
MOSFET P-CH 20V 4.2A U-WLB1515-9
PI6C22409LIEX
PI6C22409LIEX
Diodes Incorporated
IC ZERO DELAY CLK BUFF 16TSSOP
PI7C9X2G608GPBNJE
PI7C9X2G608GPBNJE
Diodes Incorporated
IC INTFACE SPECIALIZED 196LBGA
ZXBM1021JB20TC
ZXBM1021JB20TC
Diodes Incorporated
IC MOTOR CTRLR PAR U-QFN4040-20
AP7354D-18FS4-7
AP7354D-18FS4-7
Diodes Incorporated
IC REG LINEAR 1.8V 150MA 4DFN