GBJ8005-F

GBJ8005-F

Images are for reference only
See Product Specifications

GBJ8005-F
Описание:
BRIDGE RECT 1PHASE 50V 8A GBJ
Упаковка:
Tube
Datasheet:
GBJ8005-F Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GBJ8005-F
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:Diodes Incorporated
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:04d59a4f67a72cfc8a6f8046b91ff693
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):1c53213259cb70ca6e36d7a9c97e7231
Current - Average Rectified (Io):f8cc56260823e63e891e80728bae51e6
Voltage - Forward (Vf) (Max) @ If:84de3a0e5de04e25e6ba2a28825446e6
Current - Reverse Leakage @ Vr:96774893144e08e5b5c1b093d2e01509
Operating Temperature:55ce755c497e7a4a96e8f6d89292982a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:0f56be37c00e4bdfcd6420fa2e370a73
Supplier Device Package:114dcfe9e048eab1362aafbb64136b37
In Stock: 3
Stock:
3 Can Ship Immediately
  • Делиться:
Для использования с
CBR1-D020S TR13 PBFREE
CBR1-D020S TR13 PBFREE
Central Semiconductor Corp
BRIDGE RECT 1P 200V 1A 4SMDIP
DD360N22KHPSA1
DD360N22KHPSA1
Infineon Technologies
BRIDGE RECT 1P 2.2KV 360A PB50AT
VUE130-06NO7
VUE130-06NO7
IXYS
BRIDGE RECT 3P 600V 130A ECOPAC2
DBLS102G
DBLS102G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 100V 1A DBLS
GBU608G
GBU608G
SMC Diode Solutions
BRIDGE RECT 1PHASE 800V 6A GBU
GBU4G-M3/45
GBU4G-M3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 400V 4A GBU
BU20105S-E3/45
BU20105S-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 1KV 3.5A BU-5S
G5SBA20-E3/51
G5SBA20-E3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 200V 2.8A GBU
PAB1CD431690
PAB1CD431690
Powerex Inc.
3-PHASE AC SWITCH ASSEMBLY
TS20P04G C2G
TS20P04G C2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 400V 20A TS-6P
GBU8JL-7014M3/45
GBU8JL-7014M3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 3.9A GBU
DBL153GH
DBL153GH
Taiwan Semiconductor Corporation
DIODE BRIDGE 1.5A 200V DBL
Вас также может заинтересовать
P4SMAJ75ADF-13
P4SMAJ75ADF-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR D-F
PXD500002
PXD500002
Diodes Incorporated
XTAL OSC XO 135.0000MHZ LVDS
JT25260036
JT25260036
Diodes Incorporated
XO TEMP COMP SEAM2520
BZX84C16W-7-F
BZX84C16W-7-F
Diodes Incorporated
DIODE ZENER 16V 200MW SOT323
BZX84C22-7-F-79
BZX84C22-7-F-79
Diodes Incorporated
DIODE ZENER
DMP3048LSD-13
DMP3048LSD-13
Diodes Incorporated
MOSFET 2 P-CHANNEL 30V 4.8A 8SO
DMP3056L-7
DMP3056L-7
Diodes Incorporated
MOSFET P-CH 30V 4.3A SOT23
DMN3150L-7
DMN3150L-7
Diodes Incorporated
MOSFET N-CH 28V 3.8A SOT23-3
DMN4036LK3-13
DMN4036LK3-13
Diodes Incorporated
MOSFET N-CH 40V 8.5A TO252-3
DMT10H014LSS-13
DMT10H014LSS-13
Diodes Incorporated
MOSFET N-CH 100V 8.9A 8SO
PS8A0039PEX
PS8A0039PEX
Diodes Incorporated
HEATER CONTROLLER DIP-16
AH1388-HK4-7
AH1388-HK4-7
Diodes Incorporated
MAGNETIC SWITCH UNIPOLAR DL 4DFN