SDT12A120P5-13

SDT12A120P5-13

Images are for reference only
See Product Specifications

SDT12A120P5-13
Описание:
DIODE SCHOTTKY 120V 12A POWRDI 5
Упаковка:
Tape & Reel (TR)
Datasheet:
SDT12A120P5-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SDT12A120P5-13
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):53b3b1ea0de8e56a28871162445a88f6
Current - Average Rectified (Io):0b85066ca7fc96c0d9083cec9ee69087
Voltage - Forward (Vf) (Max) @ If:c5f72a0001e78d870c5a08daa0407ef7
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:a34b93f4f90a8d08d8022ba067f711d2
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:f559aa3270373eb7ba726c35892e088b
Supplier Device Package:f559aa3270373eb7ba726c35892e088b
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
PUUP8DH
PUUP8DH
Taiwan Semiconductor Corporation
25NS, 8A, 200V, ULTRA FAST RECOV
BYG21M R3G
BYG21M R3G
Taiwan Semiconductor Corporation
DIODE AVALANCHE 1KV 1.5A DO214AC
HERF1008GAH
HERF1008GAH
Taiwan Semiconductor Corporation
DIODE, HIGH EFFICIENT
FSF05A40
FSF05A40
KYOCERA AVX
DIODE FAST RECOVERY 400V 5A TO-2
MER2DMA-AU_R2_006A1
MER2DMA-AU_R2_006A1
Panjit International Inc.
200V,SUPER FAST RECOVERY RECTIFI
S5M-M3/57T
S5M-M3/57T
Vishay General Semiconductor - Diodes Division
DIODE GPP 5A 1000V DO-214AB
C6D06065Q-TR
C6D06065Q-TR
Wolfspeed, Inc.
6A 650V SIC SCHOTTKY QFN
JAN1N6873UTK2CS
JAN1N6873UTK2CS
Microchip Technology
POWER SCHOTTKY
RS3AHM6G
RS3AHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
SFAF807G C0G
SFAF807G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 8A ITO220AC
HS5A M6
HS5A M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
RB540VM-30FHTE-17
RB540VM-30FHTE-17
Rohm Semiconductor
SCHOTTKY BARRIER DIODES, 30V, 20
Вас также может заинтересовать
3.0SMCJ14AQ-13
3.0SMCJ14AQ-13
Diodes Incorporated
TVS DIODE 14VWM 23.2VC SMC
FN2600024
FN2600024
Diodes Incorporated
XTAL OSC XO 26.0000MHZ CMOS SMD
S1703B-27.0000(T)
S1703B-27.0000(T)
Diodes Incorporated
XTAL OSC XO 27.0000MHZ HCMOS TTL
HX5021C0156.250000
HX5021C0156.250000
Diodes Incorporated
XTAL OSC XO 156.2500MHZ LVPECL
SBR02U30LP-7
SBR02U30LP-7
Diodes Incorporated
DIODE SBR 30V 200MA 2DFN
SD840-B
SD840-B
Diodes Incorporated
DIODE SCHOTTKY 40V 8A DO201AD
BZT52C24Q-7-F
BZT52C24Q-7-F
Diodes Incorporated
ZENER DIODE SOD123 T&R 3K
DMP32D9UDA-7B
DMP32D9UDA-7B
Diodes Incorporated
MOSFET BVDSS: 25V-30V X2-DFN0806
DMP22D5UFO-7B
DMP22D5UFO-7B
Diodes Incorporated
MOSFET BVDSS: 8V~24V X2-DFN0604-
PI7C9X760BCLEX
PI7C9X760BCLEX
Diodes Incorporated
IC SPI TO UART BRDG 16TSSOP 2.5K
ZRC250F03TA
ZRC250F03TA
Diodes Incorporated
IC VREF SHUNT 3% SOT23
AP7366-36SN-7
AP7366-36SN-7
Diodes Incorporated
LDO CMOS HICURR U-DFN2020-6 T&R