ZXMN10B08E6QTA

ZXMN10B08E6QTA

Images are for reference only
See Product Specifications

ZXMN10B08E6QTA
Описание:
MOSFET BVDSS: 61V~100V SOT26 T&R
Упаковка:
Tape & Reel (TR)
Datasheet:
ZXMN10B08E6QTA Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:ZXMN10B08E6QTA
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:f7fb220712c5394806bfda5a6cd50f70
Drive Voltage (Max Rds On, Min Rds On):75a5e650520efb1e7d03f0af8baae324
Rds On (Max) @ Id, Vgs:5eeaa51572e0214cf6253ebe0276f791
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:b612c4a92d27f2ffd8d57f360a6dcdeb
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c903bc483e5333866c5267915fe98ec1
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):14bc6fd10804736682cebd162892b3e7
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:b11ecb2721a1c9175f31d014edb16d0d
Package / Case:14a527b758f8993d661e4eaaccd26a36
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
FDS8876
FDS8876
Fairchild Semiconductor
MOSFET N-CH 30V 12.5A 8SOIC
FQD5P10TM
FQD5P10TM
onsemi
MOSFET P-CH 100V 3.6A DPAK
IRFW630BTM_FP001
IRFW630BTM_FP001
Fairchild Semiconductor
9A, 200V, 0.4OHM, N-CHANNEL
FQPF2N60
FQPF2N60
Fairchild Semiconductor
MOSFET N-CH 600V 1.6A TO220F
DMT12H7M9LPSW-13
DMT12H7M9LPSW-13
Diodes Incorporated
MOSFET BVDSS: 101V~250V POWERDI5
STD7N52K3
STD7N52K3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
DKI03082
DKI03082
Sanken
MOSFET N-CH 30V 29A TO252
APT5020SVFRG
APT5020SVFRG
Microchip Technology
MOSFET N-CH 500V 26A D3PAK
STW23NM60N
STW23NM60N
STMicroelectronics
MOSFET N-CH 600V 19A TO247-3
BSP135L6433HTMA1
BSP135L6433HTMA1
Infineon Technologies
MOSFET N-CH 600V 120MA SOT223-4
FDMS7672AS
FDMS7672AS
onsemi
MOSFET N-CH 30V 19A/42A 8PQFN
RQ3E120BNTB
RQ3E120BNTB
Rohm Semiconductor
MOSFET N-CH 30V 12A 8HSMT
Вас также может заинтересовать
FL1600123W
FL1600123W
Diodes Incorporated
CRYSTAL SURFACE MOUNT
FK4910004
FK4910004
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM3225 T&
SBRT40M80CTB
SBRT40M80CTB
Diodes Incorporated
DIODE RECT SB 80V 20A TO263AB
1N5407-B
1N5407-B
Diodes Incorporated
DIODE GEN PURP 800V 3A DO201AD
PR6003-T
PR6003-T
Diodes Incorporated
DIODE GEN PURP 200V 6A R6
D3Z15BF-7
D3Z15BF-7
Diodes Incorporated
DIODE ZENER 14.66V 400MW SOD323F
MMSZ5254BQ-13-F
MMSZ5254BQ-13-F
Diodes Incorporated
ZENER DIODE SOD123 T&R 10K
FMMT634QTA
FMMT634QTA
Diodes Incorporated
TRANS NPN DARL 100V 0.9A SOT23-3
ZXT13N20DE6TA
ZXT13N20DE6TA
Diodes Incorporated
TRANS NPN 20V 4.5A SOT23-6
PI74FCT16244CTVEX
PI74FCT16244CTVEX
Diodes Incorporated
IC BUF NON-INVERT 5.5V 48SSOP
ZHT431C02STZ
ZHT431C02STZ
Diodes Incorporated
IC VREF SHUNT ADJ 2% TO92
AP431AG-13
AP431AG-13
Diodes Incorporated
IC VREF SHUNT ADJ 0.5% 8SO