BR3506

BR3506

Images are for reference only
See Product Specifications

BR3506
Описание:
STD 35A, CASE TYPE: BR50
Упаковка:
Bag
Datasheet:
BR3506 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BR3506
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:EIC SEMICONDUCTOR INC.
Упаковка:Bag
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:04d59a4f67a72cfc8a6f8046b91ff693
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):33620148295903fa01c1f5f1771e354b
Voltage - Forward (Vf) (Max) @ If:ec37649872df70a7ececcc36c191e1aa
Current - Reverse Leakage @ Vr:cd08854385deda7826cbcc335b36c2dc
Operating Temperature:2bfdfc036647708637c6c2b106628aeb
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:478d7b3208b865da60e97b81a619e70e
Supplier Device Package:55b5ce6d653bd355e7cb1c429203b21e
In Stock: 1096
Stock:
1096 Can Ship Immediately
  • Делиться:
Для использования с
VS-26MT60
VS-26MT60
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3PHASE 600V 25A D-63
ABS2
ABS2
Diotec Semiconductor
1PH BRIDGE SO-DIL 200V 0.8A
GBJ10G
GBJ10G
SURGE
10A -400V - GBJ - BRIDGE
VUO125-12NO7
VUO125-12NO7
IXYS
BRIDGE RECT 3P 1.2KV 166A PWS-C
Z4GP210-HF
Z4GP210-HF
Comchip Technology
BRIDGE RECT 1PHASE 1KV 2A ABS
DBLS208GH
DBLS208GH
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1.2KV 2A DBLS
GBJ1504-BP
GBJ1504-BP
Micro Commercial Co
BRIDGE RECT 1PHASE 400V 15A GBJ
KBPC1506T
KBPC1506T
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BRIDGE RECT 1PHASE 600V 15A KBPC
VUO68-16NO7
VUO68-16NO7
IXYS
BRIDGE RECT 3P 1.6KV 68A ECOPAC1
GBJ5010-B1-0000
GBJ5010-B1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 50A 6KBJ
110MT100KB
110MT100KB
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3PHASE 1KV 110A MTK
M3P100A-100
M3P100A-100
GeneSiC Semiconductor
BRIDGE RECT 3P 1KV 100A MODULE
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