FBG20N04AC

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See Product Specifications

Mfr. #:

FBG20N04AC

Mfr.:

EPC Space, LLC

Описание:

GAN FET HEMT200V 4A COTS 4FSMD-A

Упаковка:

Tray

Datasheet:

FBG20N04AC Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	FBG20N04AC
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Arrays
Производитель:	EPC Space, LLC
Упаковка:	Tray
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	336d5ebc5436534e61d16e63ddfca327
FET Feature:	b1bdfad45563eb49e8648bcec381ba5b
Drain to Source Voltage (Vdss):	7d3e27204a54bb0eda7debe41ed0f619
Current - Continuous Drain (Id) @ 25°C:	7d3de555b1c3a2ae51332998545e5d39
Rds On (Max) @ Id, Vgs:	bbb87000dc1f57b7080d5ea9d32d8863
Vgs(th) (Max) @ Id:	99e0a524c2171291fa5c4f9115ba6ab6
Gate Charge (Qg) (Max) @ Vgs:	c3835deae4f571b1bd88f04ecfeafc54
Input Capacitance (Ciss) (Max) @ Vds:	d5d34ba9974c206a24127750988f90e8
Power - Max:	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	db45ecf850e0e2c14cc38f99477b2c9c
Supplier Device Package:	ebbbdba75ac7945b21b33e0255471fd4

In Stock: 46

Stock:

46 Can Ship Immediately