EPC2010

EPC2010

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EPC2010
Mfr.:
Описание:
GANFET N-CH 200V 12A DIE
Упаковка:
Tape & Reel (TR)
Datasheet:
EPC2010 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:EPC2010
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:EPC
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:35eb69956e740ed144b8581a71bf6973
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:45a7caf307977e3e68e27161a8faf377
Drive Voltage (Max Rds On, Min Rds On):ca780190014b60ca18e65ea3a5bdf39b
Rds On (Max) @ Id, Vgs:29df2a61a13e58d3295c0b9534d16c85
Vgs(th) (Max) @ Id:386866c225aaf9c7573eedf16202b00c
Gate Charge (Qg) (Max) @ Vgs:54c08cc1ab4906c7506457a0636ff132
Vgs (Max):fb9ca950a6cec256edf558a59624ceb2
Input Capacitance (Ciss) (Max) @ Vds:3d708d99245a7751e2e59b526e9e4ee2
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:3d6857d6fc0002a089cb143445c69b56
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:952f8d52fbca6da722e72d520acd6edd
Package / Case:952f8d52fbca6da722e72d520acd6edd
In Stock: 0
Stock:
0 Can Ship Immediately
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