EPC2012C

EPC2012C

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EPC2012C
Mfr.:
Описание:
GANFET N-CH 200V 5A DIE OUTLINE
Упаковка:
Tape & Reel (TR)
Datasheet:
EPC2012C Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:EPC2012C
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:EPC
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:35eb69956e740ed144b8581a71bf6973
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:d59d0f233fe79879c037a2476500de6f
Drive Voltage (Max Rds On, Min Rds On):ca780190014b60ca18e65ea3a5bdf39b
Rds On (Max) @ Id, Vgs:524dc8059d70f1c3bca07c45545bca1f
Vgs(th) (Max) @ Id:a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:d21d170f6d7abb674c38aa19f3099dd3
Vgs (Max):fb9ca950a6cec256edf558a59624ceb2
Input Capacitance (Ciss) (Max) @ Vds:bc28a86fcc577bce1627f6fd18d8e902
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:2bfdfc036647708637c6c2b106628aeb
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fed7ef7fb3049cd347cad33b2b06ef63
Package / Case:952f8d52fbca6da722e72d520acd6edd
In Stock: 40510
Stock:
40510 Can Ship Immediately
  • Делиться:
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