EPC2019

EPC2019

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EPC2019
Mfr.:
Описание:
GANFET N-CH 200V 8.5A DIE
Упаковка:
Tape & Reel (TR)
Datasheet:
EPC2019 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:EPC2019
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:EPC
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:35eb69956e740ed144b8581a71bf6973
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:f239a40bd06cc0dd1356af1443f24b77
Drive Voltage (Max Rds On, Min Rds On):ca780190014b60ca18e65ea3a5bdf39b
Rds On (Max) @ Id, Vgs:861a59476b45e135b2b60d97dc67c7e1
Vgs(th) (Max) @ Id:8a26fe201edc63fa48570d1b12a6ae8a
Gate Charge (Qg) (Max) @ Vgs:826fb387d8150331c3e477d4c9f123f2
Vgs (Max):fb9ca950a6cec256edf558a59624ceb2
Input Capacitance (Ciss) (Max) @ Vds:40b09c273f9286ff47a99b414eea49ee
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:2bfdfc036647708637c6c2b106628aeb
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:952f8d52fbca6da722e72d520acd6edd
Package / Case:952f8d52fbca6da722e72d520acd6edd
In Stock: 63673
Stock:
63673 Can Ship Immediately
  • Делиться:
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