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S2D-24B2-0808-350-P

S2D-24B2-0808-350-P

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See Product Specifications

S2D-24B2-0808-350-P
Mfr.:
Описание:
2D SILICON NANOSTAMP: RECTANGULA
Упаковка:
Bulk
Datasheet:
S2D-24B2-0808-350-P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:S2D-24B2-0808-350-P
Категория:Tapes, Adhesives, Materials
Подкатегория:2D Materials
Производитель:Finisar Corporation
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Type:336d5ebc5436534e61d16e63ddfca327
Number of Layers:c4ca4238a0b923820dcc509a6f75849b
Length:6c5077bcd012d4b1096bac9389addc37
Width:acaf643e7ab9df84e07d770c7110016e
Thickness - Theoretical:c72dcbe5f3340a3e86b996ee598dc6e1
Size:336d5ebc5436534e61d16e63ddfca327
Substrate:ec47388b272f906a796414eaf6ea8563
Suspension:336d5ebc5436534e61d16e63ddfca327
In Stock: 3
Stock:
3 Can Ship Immediately
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Для использования с
KLG-100100-18CU+PMMA
KLG-100100-18CU+PMMA
Kennedy Labs, a division of Hub Incorporated
CVD GRAPHENE ON CU 4" PMMA X1
KLG-AKIT
KLG-AKIT
Kennedy Labs, a division of Hub Incorporated
GRAPHENE DISCOVERY KIT 1 WAFER
S2D-24D2-0808-350-P
S2D-24D2-0808-350-P
Finisar Corporation
2D SILICON NANOSTAMP: HEXAGONAL
KL-6P101D-E1
KL-6P101D-E1
Kennedy Labs, a division of Hub Incorporated
6 POINT METAL AND BN, 16 DIE DIC
KL-HF100-E1
KL-HF100-E1
Kennedy Labs, a division of Hub Incorporated
HALL EFFECT STRUCTURE ON SIO2 ON
KL-A1004P101-E1
KL-A1004P101-E1
Kennedy Labs, a division of Hub Incorporated
A100 WITH HEADER AND 4 POINT WIT
KL-A200DC801-E1
KL-A200DC801-E1
Kennedy Labs, a division of Hub Incorporated
A200 WITH COMPONENTS AND DROP CA
KL-A300MS101-E1
KL-A300MS101-E1
Kennedy Labs, a division of Hub Incorporated
AS 300 WITH MEDIUM SERPENTINE WI
KLG-S4040-PPR-45UM
KLG-S4040-PPR-45UM
Kennedy Labs, a division of Hub Incorporated
GRAPHENE THERMAL SPREAD SUB 25MM
SNS-C14.3-0808-350-D55-P
SNS-C14.3-0808-350-D55-P
Finisar Corporation
LINEAR SILICON NANOSTAMP: PERIOD
S2D-18B2-0808-350-P
S2D-18B2-0808-350-P
Finisar Corporation
2D SILICON NANOSTAMP: RECTANGULA
SNS-C14.3-0808-150-D45-P
SNS-C14.3-0808-150-D45-P
Finisar Corporation
LINEAR SILICON NANOSTAMP: PERIOD
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