1N1190

1N1190

Images are for reference only
See Product Specifications

1N1190
Описание:
DIODE GEN PURP 600V 35A DO5
Упаковка:
Bulk
Datasheet:
1N1190 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N1190
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:GeneSiC Semiconductor
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):8b8630bb3de717c7016fc83f4b38f166
Voltage - Forward (Vf) (Max) @ If:ff987f14dcda22075f5356c154b8c8f6
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:5889fd957522bc6db8b839151281a2e7
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:aa594d7c7815385a1dd9ed9fbbb2d316
Package / Case:06178154bc946162b3c6d6bd7368c0b0
Supplier Device Package:be6b0422ac84352e4a61d16f69faf331
Operating Temperature - Junction:cee3b2fd82f13963029520c13d132f27
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SDT5H100LP5-7
SDT5H100LP5-7
Diodes Incorporated
DIODE SCHOTTKY 100V 5A POWERDI5
BYT52M-TR
BYT52M-TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.4A SOD57
VS-300U60A
VS-300U60A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 300A DO205AB
SK33A-TP
SK33A-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 3A DO214AC
PMEG6010ESBC,315
PMEG6010ESBC,315
NXP Semiconductors
NEXPERIA PMEG6010ESBC - RECTIFIE
STTH812DI
STTH812DI
STMicroelectronics
DIODE GEN PURP 1.2KV 8A TO220LNS
VS-20MQ040-M3/5AT
VS-20MQ040-M3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 2A 40V SMA
UFS350JE3/TR13
UFS350JE3/TR13
Microchip Technology
DIODE GEN PURP 500V 3A DO214AB
CD3595
CD3595
Microchip Technology
SIGNAL/COMPUTER DIODE
1N6622U/TR
1N6622U/TR
Microchip Technology
UFR,FRR
RSFJL RTG
RSFJL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
SR810HA0G
SR810HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 8A DO201AD
Вас также может заинтересовать
KBL602G
KBL602G
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 100V 6A KBL
KBPC2506T
KBPC2506T
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 600V 25A KBPC
MBRT60030
MBRT60030
GeneSiC Semiconductor
DIODE MODULE 30V 300A 3TOWER
MURTA20040
MURTA20040
GeneSiC Semiconductor
DIODE GEN PURP 400V 100A 3 TOWER
MUR10060CTR
MUR10060CTR
GeneSiC Semiconductor
DIODE MODULE 600V 50A 2TOWER
MBRTA600150
MBRTA600150
GeneSiC Semiconductor
DIODE SCHOTTKY 150V 300A 3TOWER
UFT14005
UFT14005
GeneSiC Semiconductor
DIODE GEN PURP 50V 70A TO249AB
GD60MPS06H
GD60MPS06H
GeneSiC Semiconductor
650V 60A TO-247-2 SIC SCHOTTKY
MBR3530
MBR3530
GeneSiC Semiconductor
DIODE SCHOTTKY 30V 35A DO4
MBR8080R
MBR8080R
GeneSiC Semiconductor
DIODE SCHOTTKY REV 80V DO5
1N3289A
1N3289A
GeneSiC Semiconductor
DIODE GEN PURP 200V 100A DO205AA
G3R160MT12D
G3R160MT12D
GeneSiC Semiconductor
SIC MOSFET N-CH 22A TO247-3