1N3214R

1N3214R

Images are for reference only
See Product Specifications

1N3214R
Описание:
DIODE GEN PURP REV 600V 15A DO5
Упаковка:
Bulk
Datasheet:
1N3214R Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N3214R
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:GeneSiC Semiconductor
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:ceae110a5ddc764cf513c03a64e7f2f7
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):d42c1d2f3b3005c2f924b534d0bfb0e7
Voltage - Forward (Vf) (Max) @ If:0e91659733e6a343c848c1ab0ad972a6
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:5889fd957522bc6db8b839151281a2e7
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:aa594d7c7815385a1dd9ed9fbbb2d316
Package / Case:06178154bc946162b3c6d6bd7368c0b0
Supplier Device Package:be6b0422ac84352e4a61d16f69faf331
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
C4D08120E
C4D08120E
Wolfspeed, Inc.
DIODE SCHOTTKY 1.2KV 8A TO252-2
1SS119-14TD-E
1SS119-14TD-E
Renesas Electronics America Inc
DIODE FOR HIGH SPEED SWITCHING
SBR8A60P5-13
SBR8A60P5-13
Diodes Incorporated
DIODE SBR 60V 8A POWERDI5
V2P22LHM3/H
V2P22LHM3/H
Vishay General Semiconductor - Diodes Division
SCHOTTKY RECTIFIER 2A 200V SMP
SR5200-TP
SR5200-TP
Micro Commercial Co
DIODE SCHOTTKY 5A 200V DO-201AD
BAL99,215
BAL99,215
Nexperia USA Inc.
DIODE GEN PURP 70V 215MA TO236AB
VSSB410S-M3/52T
VSSB410S-M3/52T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 1.9A DO214AA
SK23-TP
SK23-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 2A DO214AA
CURM104-G
CURM104-G
Comchip Technology
DIODE GEN PURP 400V 1A MINISMA
DSB0.2A20
DSB0.2A20
Microchip Technology
DIODE SCHOTTKY 20V 200MA DO35
HER303G R0G
HER303G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
UG12J
UG12J
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 12A TO220AC
Вас также может заинтересовать
GD2X100MPS06N
GD2X100MPS06N
GeneSiC Semiconductor
650V 200A SOT-227 SIC SCHOTTKY M
MSRTA50080A
MSRTA50080A
GeneSiC Semiconductor
DIODE MODULE 800V 500A 3TOWER
MBRT600100R
MBRT600100R
GeneSiC Semiconductor
DIODE MODULE 100V 300A 3TOWER
MBRT600150R
MBRT600150R
GeneSiC Semiconductor
DIODE SCHOTTKY 150V 300A 3 TOWER
MBR200100CTS
MBR200100CTS
GeneSiC Semiconductor
DIODE MODULE 100V 200A SOT227
MURT20005
MURT20005
GeneSiC Semiconductor
DIODE MODULE 50V 100A 3TOWER
MBRTA60045
MBRTA60045
GeneSiC Semiconductor
DIODE SCHOTTKY 45V 300A 3TOWER
S40Q
S40Q
GeneSiC Semiconductor
DIODE GEN PURP 1.2KV 40A DO5
1N1204A
1N1204A
GeneSiC Semiconductor
DIODE GEN PURP 400V 12A DO4
1N1187R
1N1187R
GeneSiC Semiconductor
DIODE GEN PURP REV 300V 35A DO5
FR30A02
FR30A02
GeneSiC Semiconductor
DIODE GEN PURP 50V 30A DO5
1N6096
1N6096
GeneSiC Semiconductor
DIODE SCHOTTKY 40V 25A DO4