1N5830

1N5830

Images are for reference only
See Product Specifications

1N5830
Описание:
DIODE SCHOTTKY 25V 25A DO4
Упаковка:
Bulk
Datasheet:
1N5830 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N5830
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:GeneSiC Semiconductor
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):622fb57dec9cae5648afabcd559f8856
Current - Average Rectified (Io):eea556a835fcc25a12c77951a23981ea
Voltage - Forward (Vf) (Max) @ If:96c0002a713aa14b145efcfc568d104a
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:3b599e232886b5766c485509c1f8c092
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:aa594d7c7815385a1dd9ed9fbbb2d316
Package / Case:fb80c0eb7ed9981e55854ca87e313d55
Supplier Device Package:6e85b179a5fe900fb31219c393baf612
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
PMEG3010EB/S500115
PMEG3010EB/S500115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
VS-E4PH6006LHN3
VS-E4PH6006LHN3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 60A TO247AD
BASH19LT1G
BASH19LT1G
onsemi
DIODE SWITCH 250V SOT23-3
US1JH
US1JH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AC
SE20FDHM3/H
SE20FDHM3/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1.7A DO219AB
JANTXV1N5186
JANTXV1N5186
Microchip Technology
DIODE GEN PURP 100V 3A AXIAL
R7202606XXOO
R7202606XXOO
Powerex Inc.
DIODE GP 2.6KV 600A DO200AB
1N5391G-T
1N5391G-T
Diodes Incorporated
DIODE GEN PURP 50V 1.5A DO15
GP10NHE3/54
GP10NHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.1KV 1A DO204AL
SS23SHE3_A/H
SS23SHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 2A 30V DO-214AC
BAS16W-7
BAS16W-7
Diodes Incorporated
DIODE GEN PURP 75V 150MA SOT323
BY229X-800,127
BY229X-800,127
NXP USA Inc.
DIODE GEN PURP 600V 8A TO220F
Вас также может заинтересовать
KBPC1506W
KBPC1506W
GeneSiC Semiconductor
BRIDGE RECT 1P 600V 15A KBPC-W
MBR200100CTR
MBR200100CTR
GeneSiC Semiconductor
DIODE MODULE 100V 200A 2TOWER
MSRTA6001R
MSRTA6001R
GeneSiC Semiconductor
DIODE MODULE 1.6KV 600A 3TOWER
MURTA300120R
MURTA300120R
GeneSiC Semiconductor
DIODE GEN PURP 600V 150A 3 TOWER
MBR50045CTR
MBR50045CTR
GeneSiC Semiconductor
DIODE MODULE 45V 250A 2TOWER
MBRTA40045RL
MBRTA40045RL
GeneSiC Semiconductor
DIODE SCHOTTKY 45V 200A 3TOWER
1N3765
1N3765
GeneSiC Semiconductor
DIODE GEN PURP 700V 35A DO5
1N2131A
1N2131A
GeneSiC Semiconductor
DIODE GEN PURP 200V 60A DO5
FR40DR02
FR40DR02
GeneSiC Semiconductor
DIODE GEN PURP REV 200V 40A DO5
150KR20A
150KR20A
GeneSiC Semiconductor
DIODE GEN PURP 200V 150A DO205AA
GB50MPS17-247
GB50MPS17-247
GeneSiC Semiconductor
SIC DIODE 1700V 50A TO-247-2
G3R30MT12K
G3R30MT12K
GeneSiC Semiconductor
SIC MOSFET N-CH 90A TO247-4