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See Product Specifications
| номер части: | G2R1000MT17J |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | GeneSiC Semiconductor |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | ed9a2411b032b5ad765b9d5f6b1bc8e1 |
| Drain to Source Voltage (Vdss): | eefb5d410547fcbb0f7667be005adcb4 |
| Current - Continuous Drain (Id) @ 25°C: | f5471b3e019830b8910e32dfcbdd5756 |
| Drive Voltage (Max Rds On, Min Rds On): | c828a77388b77eed02df2bdc48ce88f8 |
| Rds On (Max) @ Id, Vgs: | 6ea2b8d0fe3f9f4ccb8886c7fc641f09 |
| Vgs(th) (Max) @ Id: | bf97e2eca92af8b59d1ac592805d8658 |
| Gate Charge (Qg) (Max) @ Vgs: | 336d5ebc5436534e61d16e63ddfca327 |
| Vgs (Max): | 36999a728680cfe59d42f82be0272706 |
| Input Capacitance (Ciss) (Max) @ Vds: | 356394bc844a94e4e6cc52508f65e226 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 310e1bed8d847256aafad019a1bcc2e2 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 265fa23fae77f27cc531604968c799aa |
| Package / Case: | f0141ac7a209283a1eeaae764566c410 |
