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See Product Specifications
| номер части: | G3R350MT12J |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | GeneSiC Semiconductor |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | ed9a2411b032b5ad765b9d5f6b1bc8e1 |
| Drain to Source Voltage (Vdss): | edca1d2343e4e5615ce51a879f622a76 |
| Current - Continuous Drain (Id) @ 25°C: | 339da39144bec9f61f0945ae3ef8f55e |
| Drive Voltage (Max Rds On, Min Rds On): | c848c43fe07598760b6ae77bbaac9f40 |
| Rds On (Max) @ Id, Vgs: | 3418caebb5662996607e6cc8b974fc5b |
| Vgs(th) (Max) @ Id: | 29029d611a5a2cb1f31bf7b92e89a9e1 |
| Gate Charge (Qg) (Max) @ Vgs: | 6451f9d025f8cb2b46871d18ee290b8f |
| Vgs (Max): | 9884d8b7fc60ad43c98d6d70ea13a6eb |
| Input Capacitance (Ciss) (Max) @ Vds: | 12688c67b06a776799217019d85f89f0 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | fc68e31357073b0dee08946ec891c227 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 265fa23fae77f27cc531604968c799aa |
| Package / Case: | f0141ac7a209283a1eeaae764566c410 |
