GA05JT12-263

GA05JT12-263

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GA05JT12-263
Описание:
TRANS SJT 1200V 15A D2PAK
Упаковка:
Tube
Datasheet:
GA05JT12-263 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GA05JT12-263
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:GeneSiC Semiconductor
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:9c6688ef624c6423a2454cecdc869df8
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:34f27d027764756cd9f657d693b9fb9c
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2c9bf508318523e1c2694d418af83b9e
Operating Temperature:dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:265fa23fae77f27cc531604968c799aa
Package / Case:f0141ac7a209283a1eeaae764566c410
In Stock: 0
Stock:
0 Can Ship Immediately
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