GA08JT17-247

GA08JT17-247

Images are for reference only
See Product Specifications

GA08JT17-247
Описание:
TRANS SJT 1700V 8A TO247AB
Упаковка:
Tube
Datasheet:
GA08JT17-247 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GA08JT17-247
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:GeneSiC Semiconductor
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:9c6688ef624c6423a2454cecdc869df8
Drain to Source Voltage (Vdss):eefb5d410547fcbb0f7667be005adcb4
Current - Continuous Drain (Id) @ 25°C:260472c338d10dc41797a6ece1933a48
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:f06f87ec617c7b59ce728ba46a949b49
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):af93033d5a58ca334eaba06234e57460
Operating Temperature:dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:cb24d8a945145cef1317257ec42e9ef0
Package / Case:748a8539a6c3c7dbdb455218c72fac40
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SQJ461EP-T1_GE3
SQJ461EP-T1_GE3
Vishay Siliconix
MOSFET P-CH 60V 30A PPAK SO-8
NX138BK215
NX138BK215
NXP USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
PMT200EPEA115
PMT200EPEA115
NXP USA Inc.
P-CHANNEL MOSFET
PJL9416_R2_00001
PJL9416_R2_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
AOI5N40
AOI5N40
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 400V 4.2A TO251A
DMT10H009SCG-13
DMT10H009SCG-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V V-DFN3333
IPAW60R280CEXKSA1
IPAW60R280CEXKSA1
Infineon Technologies
MOSFET N-CH 600V 19.3A TO220
STW48N60M6
STW48N60M6
STMicroelectronics
MOSFET N-CH 600V 39A TO247
IRF5803D2TR
IRF5803D2TR
Infineon Technologies
MOSFET P-CH 40V 3.4A 8SO
FQU4N20TU
FQU4N20TU
onsemi
MOSFET N-CH 200V 3A IPAK
IRL3716STRRPBF
IRL3716STRRPBF
Infineon Technologies
MOSFET N-CH 20V 180A D2PAK
RSF010P03TL
RSF010P03TL
Rohm Semiconductor
MOSFET P-CH 30V 1A TUMT3
Вас также может заинтересовать
FST7360M
FST7360M
GeneSiC Semiconductor
DIODE SCHOTTKY 60V 35A D61-3M
MBRTA40020RL
MBRTA40020RL
GeneSiC Semiconductor
DIODE SCHOTTKY 20V 200A 3TOWER
MBRTA50045R
MBRTA50045R
GeneSiC Semiconductor
DIODE SCHOTTKY 45V 250A 3TOWER
MBRTA60060R
MBRTA60060R
GeneSiC Semiconductor
DIODE SCHOTTKY 60V 300A 3TOWER
GD05MPS17H
GD05MPS17H
GeneSiC Semiconductor
1700V 5A TO-247-2 SIC SCHOTTKY M
GD30MPS12J
GD30MPS12J
GeneSiC Semiconductor
1200V 30A TO-263-7 SIC SCHOTTKY
GD50MPS12H
GD50MPS12H
GeneSiC Semiconductor
1200V 50A TO-247-2 SIC SCHOTTKY
1N3768R
1N3768R
GeneSiC Semiconductor
DIODE GEN PURP REV 1KV 35A DO5
GKN130/08
GKN130/08
GeneSiC Semiconductor
DIODE GEN PURP 800V 165A DO205AA
GKR130/04
GKR130/04
GeneSiC Semiconductor
DIODE GEN PURP 400V 165A DO205AA
MBRH12045R
MBRH12045R
GeneSiC Semiconductor
DIODE SCHOTTKY 45V 120A D-67
GKN26/16
GKN26/16
GeneSiC Semiconductor
DIODE GEN PURP 1.6KV 25A DO4