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See Product Specifications
| номер части: | GA100JT12-227 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | GeneSiC Semiconductor |
| Упаковка: | Tube |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 336d5ebc5436534e61d16e63ddfca327 |
| Technology: | 9c6688ef624c6423a2454cecdc869df8 |
| Drain to Source Voltage (Vdss): | edca1d2343e4e5615ce51a879f622a76 |
| Current - Continuous Drain (Id) @ 25°C: | 75a5ad36ce0e8ed0771777e5b487a394 |
| Drive Voltage (Max Rds On, Min Rds On): | 336d5ebc5436534e61d16e63ddfca327 |
| Rds On (Max) @ Id, Vgs: | e7aed840753a0f31d8e099d6a192e9f3 |
| Vgs(th) (Max) @ Id: | 336d5ebc5436534e61d16e63ddfca327 |
| Gate Charge (Qg) (Max) @ Vgs: | 336d5ebc5436534e61d16e63ddfca327 |
| Vgs (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| Input Capacitance (Ciss) (Max) @ Vds: | b7ba1c3cb868874fa9e3e5e1a951ef25 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 8d4ac3e5859105da21024718bfc56b92 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 678457b2fd6f368ccd41b6654ad866df |
| Supplier Device Package: | aa5ed6d1c2d9b54d672d410aea209373 |
| Package / Case: | cafcaadef55a90fa9f519d3abd68cad9 |
