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See Product Specifications
| номер части: | GA10JT12-247 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | GeneSiC Semiconductor |
| Упаковка: | Tube |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 336d5ebc5436534e61d16e63ddfca327 |
| Technology: | 9c6688ef624c6423a2454cecdc869df8 |
| Drain to Source Voltage (Vdss): | edca1d2343e4e5615ce51a879f622a76 |
| Current - Continuous Drain (Id) @ 25°C: | 4cbc835c709aa2e29cefbdf46fa4c9f1 |
| Drive Voltage (Max Rds On, Min Rds On): | 336d5ebc5436534e61d16e63ddfca327 |
| Rds On (Max) @ Id, Vgs: | d23ab92118b38776a75c0630093b9a51 |
| Vgs(th) (Max) @ Id: | 336d5ebc5436534e61d16e63ddfca327 |
| Gate Charge (Qg) (Max) @ Vgs: | 336d5ebc5436534e61d16e63ddfca327 |
| Vgs (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| Input Capacitance (Ciss) (Max) @ Vds: | 336d5ebc5436534e61d16e63ddfca327 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | bfa3d0a034898aeabdf672484043fbee |
| Operating Temperature: | dfb4ad46e1ac805451b8f397e97630b4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | cb24d8a945145cef1317257ec42e9ef0 |
| Package / Case: | 748a8539a6c3c7dbdb455218c72fac40 |
