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See Product Specifications
| номер части: | GA10JT12-263 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | GeneSiC Semiconductor |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 336d5ebc5436534e61d16e63ddfca327 |
| Technology: | 9c6688ef624c6423a2454cecdc869df8 |
| Drain to Source Voltage (Vdss): | edca1d2343e4e5615ce51a879f622a76 |
| Current - Continuous Drain (Id) @ 25°C: | b306e492b5613991dbec23798b691a05 |
| Drive Voltage (Max Rds On, Min Rds On): | 336d5ebc5436534e61d16e63ddfca327 |
| Rds On (Max) @ Id, Vgs: | 31407d1ba20d98b3b0ffb41bb75589b8 |
| Vgs(th) (Max) @ Id: | 336d5ebc5436534e61d16e63ddfca327 |
| Gate Charge (Qg) (Max) @ Vgs: | 336d5ebc5436534e61d16e63ddfca327 |
| Vgs (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| Input Capacitance (Ciss) (Max) @ Vds: | 5afae8f99ea5fdda02469d2b408e2c66 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | bfa3d0a034898aeabdf672484043fbee |
| Operating Temperature: | dfb4ad46e1ac805451b8f397e97630b4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 336d5ebc5436534e61d16e63ddfca327 |
| Package / Case: | 336d5ebc5436534e61d16e63ddfca327 |
