GA10JT12-263

GA10JT12-263

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GA10JT12-263
Описание:
TRANS SJT 1200V 25A
Упаковка:
Tube
Datasheet:
GA10JT12-263 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GA10JT12-263
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:GeneSiC Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:9c6688ef624c6423a2454cecdc869df8
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:b306e492b5613991dbec23798b691a05
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:31407d1ba20d98b3b0ffb41bb75589b8
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:5afae8f99ea5fdda02469d2b408e2c66
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):bfa3d0a034898aeabdf672484043fbee
Operating Temperature:dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
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