GA20JT12-263

GA20JT12-263

Images are for reference only
See Product Specifications

GA20JT12-263
Описание:
TRANS SJT 1200V 45A D2PAK
Упаковка:
Tube
Datasheet:
GA20JT12-263 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GA20JT12-263
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:GeneSiC Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:9c6688ef624c6423a2454cecdc869df8
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:1b5c1e34cbfafdb5265e5aeed8e935d2
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:7a68f9bb3996200b9d3573b20a32025e
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:f115064389938c8ec0339877326d31eb
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):6715b2d3252dfdb068089f26425c2bc1
Operating Temperature:dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:265fa23fae77f27cc531604968c799aa
Package / Case:f0141ac7a209283a1eeaae764566c410
In Stock: 81
Stock:
81 Can Ship Immediately
  • Делиться:
Для использования с
SI7430DP-T1-GE3
SI7430DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 150V 26A PPAK SO-8
SQ2361ES-T1_BE3
SQ2361ES-T1_BE3
Vishay Siliconix
MOSFET P-CH 60V 2.8A SOT23-3
BUK6217-55C,118
BUK6217-55C,118
NXP USA Inc.
MOSFET N-CH 55V 44A DPAK
IQE030N06NM5CGATMA1
IQE030N06NM5CGATMA1
Infineon Technologies
TRENCH 40<-<100V PG-TTFN-9
TSM60N1R4CH C5G
TSM60N1R4CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 3.3A TO251
IPD30N12S3L31ATMA1
IPD30N12S3L31ATMA1
Infineon Technologies
MOSFET N-CHANNEL_100+
STD9N60M2
STD9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A DPAK
IPW60R075CPAFKSA1
IPW60R075CPAFKSA1
Infineon Technologies
AUTOMOTIVE
IRLU024N
IRLU024N
Infineon Technologies
MOSFET N-CH 55V 17A I-PAK
IRFI2807
IRFI2807
Infineon Technologies
MOSFET N-CH 75V 40A TO220AB FP
IRF6623TR1
IRF6623TR1
Infineon Technologies
MOSFET N-CH 20V 16A DIRECTFET
SI7455DP-T1-GE3
SI7455DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 80V 28A PPAK SO-8
Вас также может заинтересовать
MBR2X080A060
MBR2X080A060
GeneSiC Semiconductor
DIODE SCHOTTKY 60V 80A SOT227
MUR10020CT
MUR10020CT
GeneSiC Semiconductor
DIODE MODULE 200V 50A 2TOWER
MBR200200CTR
MBR200200CTR
GeneSiC Semiconductor
DIODE SCHOTTKY 200V 100A 2 TOWER
MURT30020R
MURT30020R
GeneSiC Semiconductor
DIODE MODULE 200V 150A 3TOWER
MBRT30035
MBRT30035
GeneSiC Semiconductor
DIODE MODULE 35V 150A 3TOWER
MURTA40060
MURTA40060
GeneSiC Semiconductor
DIODE GEN PURP 600V 200A 3 TOWER
MURTA40060R
MURTA40060R
GeneSiC Semiconductor
DIODE GEN PURP 600V 200A 3 TOWER
FST8330M
FST8330M
GeneSiC Semiconductor
DIODE MODULE 30V 80A D61-3M
MBRTA500200R
MBRTA500200R
GeneSiC Semiconductor
DIODE SCHOTTKY 200V 250A 3TOWER
FR6GR05
FR6GR05
GeneSiC Semiconductor
DIODE GEN PURP REV 400V 16A DO4
1N6095
1N6095
GeneSiC Semiconductor
DIODE SCHOTTKY 30V 25A DO4
MBR3535
MBR3535
GeneSiC Semiconductor
DIODE SCHOTTKY 35V 35A DO4