GA50JT06-258

GA50JT06-258

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GA50JT06-258
Описание:
TRANS SJT 600V 100A TO258
Упаковка:
Bulk
Datasheet:
GA50JT06-258 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GA50JT06-258
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:GeneSiC Semiconductor
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:9c6688ef624c6423a2454cecdc869df8
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:4cd988b83fc990b9e8358853bdd4f330
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:9bcf20879564349c24aa9b3ee29e9044
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):a2cce592d8b0aebe915cb849978f1f1c
Operating Temperature:8abfdd6e4cbc18ff05488a24656b9aac
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:4da242c8db0deed1f8d0864fc68eff59
Package / Case:404ec679e06704fd7c81d92b65005c46
In Stock: 0
Stock:
0 Can Ship Immediately
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