GB10SLT12-214

GB10SLT12-214

Images are for reference only
See Product Specifications

GB10SLT12-214
Описание:
SIC SCHOTTKY DIODE 1200V 10A
Упаковка:
Cut Tape (CT)
Datasheet:
GB10SLT12-214 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GB10SLT12-214
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:GeneSiC Semiconductor
Упаковка:Cut Tape (CT)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Diode Type:336d5ebc5436534e61d16e63ddfca327
Voltage - DC Reverse (Vr) (Max):336d5ebc5436534e61d16e63ddfca327
Current - Average Rectified (Io):336d5ebc5436534e61d16e63ddfca327
Voltage - Forward (Vf) (Max) @ If:336d5ebc5436534e61d16e63ddfca327
Speed:336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:336d5ebc5436534e61d16e63ddfca327
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Operating Temperature - Junction:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
JANTX1N4150-1
JANTX1N4150-1
Microchip Technology
DIODE GEN PURP 50V 200MA DO35
RS1B-E3/5AT
RS1B-E3/5AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO214AC
VSSAF5M6-M3/I
VSSAF5M6-M3/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 5A DO221AC
S42110
S42110
Microchip Technology
STD RECTIFIER
VS-50WQ10FNTRLPBF
VS-50WQ10FNTRLPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 5.5A DPAK
FR10D-TP
FR10D-TP
Micro Commercial Co
DIODE GEN PURP 200V 10A DO214AB
S5A M6G
S5A M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 5A DO214AB
HS1DL RUG
HS1DL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
FR501-AP
FR501-AP
Micro Commercial Co
DIODE GPP FAST 5A DO-201AD
SFAF1006GH
SFAF1006GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 10A 400V TO220AC
VS-20ETS12M-S1
VS-20ETS12M-S1
Vishay General Semiconductor - Diodes Division
DIODE STD REC 1200V TO220AC-2
BY329X-1500,127
BY329X-1500,127
NXP USA Inc.
DIODE GEN PURP 1.5KV 6A TO220F
Вас также может заинтересовать
KBPC3501T
KBPC3501T
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 100V 35A KBPC
MUR10010CTR
MUR10010CTR
GeneSiC Semiconductor
DIODE MODULE 100V 50A 2TOWER
MBR60035CTRL
MBR60035CTRL
GeneSiC Semiconductor
DIODE SCHOTTKY 35V 300A 2 TOWER
MBRF30080R
MBRF30080R
GeneSiC Semiconductor
DIODE SCHOTTKY 80V 150A TO244AB
MBRTA600150
MBRTA600150
GeneSiC Semiconductor
DIODE SCHOTTKY 150V 300A 3TOWER
1N1188AR
1N1188AR
GeneSiC Semiconductor
DIODE GEN PURP REV 400V 40A DO5
S70B
S70B
GeneSiC Semiconductor
DIODE GEN PURP 100V 70A DO5
MBR6060
MBR6060
GeneSiC Semiconductor
DIODE SCHOTTKY 60V 60A DO5
FR85BR02
FR85BR02
GeneSiC Semiconductor
DIODE GEN PURP REV 100V 85A DO5
1N3294A
1N3294A
GeneSiC Semiconductor
DIODE GEN PURP 800V 100A DO205AA
MBRH24030
MBRH24030
GeneSiC Semiconductor
DIODE SCHOTTKY 30V 240A D67
GA05JT03-46
GA05JT03-46
GeneSiC Semiconductor
TRANS SJT 300V 9A TO46