GKN240/12

GKN240/12

Images are for reference only
See Product Specifications

GKN240/12
Описание:
DIODE GEN PURP 1.2KV 320A DO205
Упаковка:
Bulk
Datasheet:
GKN240/12 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GKN240/12
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:GeneSiC Semiconductor
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):5299f1de8e61e0f2a3373c09707581a1
Voltage - Forward (Vf) (Max) @ If:43cc443ed3c215c5efd17ba21a3fb1af
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:4db7d01835034af6287e4a29e53d83ef
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:aa594d7c7815385a1dd9ed9fbbb2d316
Package / Case:744a0efd174191aa4dc2a4b024db25dc
Supplier Device Package:37b618b97284a1a483c1f49980ea7fad
Operating Temperature - Junction:afa67dc358f9aff6dd77fcd525b0d018
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BY880-100
BY880-100
Diotec Semiconductor
DIODE STD D5.4X7.5 100V 8A
HER102T/R
HER102T/R
EIC SEMICONDUCTOR INC.
DIODE GEN PURP 100V 1A DO41
S10D-TP
S10D-TP
Micro Commercial Co
DIODE GEN PURP 200V 10A DO214AB
BAS70L2-TP
BAS70L2-TP
Micro Commercial Co
DIODE SCHOTTKY DFN1006-2L
RGL34GHE3/98
RGL34GHE3/98
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 500MA DO213
SL42-M3/57T
SL42-M3/57T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 4A 20V DO-214AB
UFS350J/TR13
UFS350J/TR13
Microchip Technology
DIODE GEN PURP 500V 3A DO214AB
MBRF10H60-E3/45
MBRF10H60-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 10A ITO220AC
VS-20MQ100NPBF
VS-20MQ100NPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 2.1A DO214AC
MBR760HC0G
MBR760HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 7.5A TO220AC
1N5817 B0G
1N5817 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO204AL
2A06G-T
2A06G-T
Diodes Incorporated
DIODE GEN PURP 800V 2A DO15
Вас также может заинтересовать
KBPM210G
KBPM210G
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 1KV 2A KBPM
MSRT25060A
MSRT25060A
GeneSiC Semiconductor
DIODE MODULE 600V 250A 3TOWER
MBR12020CTR
MBR12020CTR
GeneSiC Semiconductor
DIODE MODULE 20V 120A 2TOWER
FST120150
FST120150
GeneSiC Semiconductor
DIODE SCHOTTKY 150V 60A TO249AB
MSRT200140AD
MSRT200140AD
GeneSiC Semiconductor
DIODE GEN 1.4KV 200A 3 TOWER
MBRF20040R
MBRF20040R
GeneSiC Semiconductor
DIODE SCHOTTKY 40V 100A TO244AB
MBRF40080R
MBRF40080R
GeneSiC Semiconductor
DIODE SCHOTTKY 80V 200A TO244AB
S6GR
S6GR
GeneSiC Semiconductor
DIODE GEN PURP REV 400V 6A DO4
S16B
S16B
GeneSiC Semiconductor
DIODE GEN PURP 100V 16A DO203AA
FR16D05
FR16D05
GeneSiC Semiconductor
DIODE GEN PURP 200V 16A DO4
FR70GR05
FR70GR05
GeneSiC Semiconductor
DIODE GEN PURP REV 400V 70A DO5
MURH7020
MURH7020
GeneSiC Semiconductor
DIODE GEN PURP 200V 70A D-67