MBR35100

MBR35100

Images are for reference only
See Product Specifications

MBR35100
Описание:
DIODE SCHOTTKY 100V 35A DO4
Упаковка:
Bulk
Datasheet:
MBR35100 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MBR35100
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:GeneSiC Semiconductor
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):227b5c7c7a2ed2ea3da210ed0860030d
Current - Average Rectified (Io):8b8630bb3de717c7016fc83f4b38f166
Voltage - Forward (Vf) (Max) @ If:969e6d0dd953e436214640c701135b4b
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:092f6433435ed251590b3d81c10cf0c6
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:aa594d7c7815385a1dd9ed9fbbb2d316
Package / Case:fb80c0eb7ed9981e55854ca87e313d55
Supplier Device Package:6e85b179a5fe900fb31219c393baf612
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
ER3G_R1_00001
ER3G_R1_00001
Panjit International Inc.
SMC, SUPER
NTE120
NTE120
NTE Electronics, Inc
DIODE GEN PURP 10V 65MA 7SIP
MA2C029TAF
MA2C029TAF
Panasonic Electronic Components
DIODE GEN PURP 6V 70MA DO34
VS-3EJH01HM3/6B
VS-3EJH01HM3/6B
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3A DO221AC
PMEG3010ER-QX
PMEG3010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
SE20AFJHM3/6B
SE20AFJHM3/6B
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1.3A DO221AC
AU1PJHM3/85A
AU1PJHM3/85A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1A DO220AA
VS-95PF80W
VS-95PF80W
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 95A DO203AB
CD214A-B250LF
CD214A-B250LF
Bourns Inc.
DIODE SCHOTTKY 50V 2A SMA
RJU6053SDPE-00#J3
RJU6053SDPE-00#J3
Renesas Electronics America Inc
DIODE GEN PURP 600V 20A LDPAK
SS36L RQG
SS36L RQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
HERA804G C0G
HERA804G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 8A TO220AC
Вас также может заинтересовать
KBL408G
KBL408G
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 800V 4A KBL
KBU1006
KBU1006
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 600V 10A KBU
MSRT150140A
MSRT150140A
GeneSiC Semiconductor
DIODE MODULE 1.4KV 150A 3TOWER
MBRT30045R
MBRT30045R
GeneSiC Semiconductor
DIODE MODULE 45V 150A 3TOWER
MUR30020CT
MUR30020CT
GeneSiC Semiconductor
DIODE MODULE 200V 150A 2TOWER
MURF10020R
MURF10020R
GeneSiC Semiconductor
DIODE MODULE 200V 50A TO244
MBR30045CTRL
MBR30045CTRL
GeneSiC Semiconductor
DIODE SCHOTTKY 45V 150A 2 TOWER
MBRTA600150
MBRTA600150
GeneSiC Semiconductor
DIODE SCHOTTKY 150V 300A 3TOWER
1N3768R
1N3768R
GeneSiC Semiconductor
DIODE GEN PURP REV 1KV 35A DO5
FR40JR05
FR40JR05
GeneSiC Semiconductor
DIODE GEN PURP REV 600V 40A DO5
MBR8020R
MBR8020R
GeneSiC Semiconductor
DIODE SCHOTTKY REV 20V DO5
GKR240/16
GKR240/16
GeneSiC Semiconductor
DIODE GEN PURP 1.6KV 320A DO205