MUR2X060A06

MUR2X060A06

Images are for reference only
See Product Specifications

MUR2X060A06
Описание:
DIODE GEN PURP 600V 60A SOT227
Упаковка:
Bulk
Datasheet:
MUR2X060A06 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MUR2X060A06
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Arrays
Производитель:GeneSiC Semiconductor
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Configuration:71264939cba8b5daef1945d404523fe1
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io) (per Diode):fb1ae724394656879f0fafb4bad9a57d
Voltage - Forward (Vf) (Max) @ If:8c9bd5f57b5e98821c66e23cac0b4dd1
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):cf0263bb811746e93e665445cb28e528
Current - Reverse Leakage @ Vr:13d3205712638babf09fa20f87db848b
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:cafcaadef55a90fa9f519d3abd68cad9
Supplier Device Package:aa5ed6d1c2d9b54d672d410aea209373
In Stock: 7
Stock:
7 Can Ship Immediately
  • Делиться:
Для использования с
VS-32CTQ030STRL-M3
VS-32CTQ030STRL-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 15A TO263AB
BAW156235
BAW156235
NXP USA Inc.
LOW-LEAKAGE DOUBLE DIODE
BD1050CS_S2_00001
BD1050CS_S2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
SFF10L05G
SFF10L05G
Taiwan Semiconductor Corporation
35NS, 10A, 300V, SUPER FAST RECO
MBRB30H60CT-E3/45
MBRB30H60CT-E3/45
Vishay General Semiconductor - Diodes Division
30A 60V HIGH BARRIER HT SKYREC T
VS-VSKJ166/16PBF
VS-VSKJ166/16PBF
Vishay General Semiconductor - Diodes Division
DIODE GEN 1.6KV 82.5A INTAPAK
MDD255-12N1
MDD255-12N1
IXYS
DIODE MODULE 1.2KV 270A Y1-CU
IRKC56/04A
IRKC56/04A
Vishay General Semiconductor - Diodes Division
DIODE MODULE 400V 60A ADD-A-PAK
SDMG0340LS-7
SDMG0340LS-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT323
CPT12050D
CPT12050D
Microsemi Corporation
DIODE MODULE 50V 60A TO244AB
BAS40-06/DG/B3R
BAS40-06/DG/B3R
Nexperia USA Inc.
DIODE SCHOTTKY TO-236AB
BAW156T-7-G
BAW156T-7-G
Diodes Incorporated
DIODE GEN PURPOSE
Вас также может заинтересовать
GBU8M
GBU8M
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 1KV 8A GBU
GBPC3510T
GBPC3510T
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 1KV 35A GBPC
MURTA300120R
MURTA300120R
GeneSiC Semiconductor
DIODE GEN PURP 600V 150A 3 TOWER
MBRT30080R
MBRT30080R
GeneSiC Semiconductor
DIODE MODULE 80V 150A 3TOWER
S25KR
S25KR
GeneSiC Semiconductor
DIODE GEN PURP 800V 25A DO220AA
S40D
S40D
GeneSiC Semiconductor
DIODE GEN PURP 200V 40A DO5
S40M
S40M
GeneSiC Semiconductor
DIODE GEN PURP 1KV 40A DO5
FR20AR02
FR20AR02
GeneSiC Semiconductor
DIODE GEN PURP REV 50V 20A DO5
150KR80A
150KR80A
GeneSiC Semiconductor
DIODE GEN PURP 800V 150A DO205AA
1N4594
1N4594
GeneSiC Semiconductor
DIODE GEN PURP 1KV 150A DO205
MBRH12080
MBRH12080
GeneSiC Semiconductor
DIODE SCHOTTKY 80V 120A D-67
MBRH240150
MBRH240150
GeneSiC Semiconductor
DIODE SCHOTTKY 150V 240A D67