GCMS080B120S1-E1

GCMS080B120S1-E1

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GCMS080B120S1-E1
Mfr.:
Описание:
SIC 1200V 80M MOSFET & 10A SBD S
Упаковка:
Tube
Datasheet:
GCMS080B120S1-E1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GCMS080B120S1-E1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:SemiQ
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:b5a4f17035c9cf549f5adf4038dff86d
Drive Voltage (Max Rds On, Min Rds On):c828a77388b77eed02df2bdc48ce88f8
Rds On (Max) @ Id, Vgs:e42daa4a9c17550338d226206d907ed9
Vgs(th) (Max) @ Id:140803a8f8b2cc64f72c5875d5e806e6
Gate Charge (Qg) (Max) @ Vgs:d22caf322417f60bd795e26f1139d7be
Vgs (Max):1d451f433f14e0cd99646c5802738209
Input Capacitance (Ciss) (Max) @ Vds:b07879fc69c5e6f4551c7f7c9cd23c81
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):e11d061943656680bc645ba4f42ff7da
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:aa5ed6d1c2d9b54d672d410aea209373
Package / Case:cafcaadef55a90fa9f519d3abd68cad9
In Stock: 10
Stock:
10 Can Ship Immediately
  • Делиться:
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