GPA030A135MN-FDR

GPA030A135MN-FDR

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GPA030A135MN-FDR
Mfr.:
Описание:
IGBT 1350V 60A 329W TO3PN
Упаковка:
Tube
Datasheet:
GPA030A135MN-FDR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GPA030A135MN-FDR
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:SemiQ
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:bc8112dacc055dbbe98cd7db53249587
Voltage - Collector Emitter Breakdown (Max):7bea4b6d3fd0ae73d2f5ecabf98ee369
Current - Collector (Ic) (Max):4c7be7db0ed1160a2dfac6e29929b43d
Current - Collector Pulsed (Icm):0c20bf52f73e6eda5c611985e88ac62e
Vce(on) (Max) @ Vge, Ic:56f5208be9fee270b853736099a55b14
Power - Max:a22a797ea07512aa2e136181f703dbb3
Switching Energy:71a24c0cf9f6eea9bcccb2d761187679
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:3c4d207d69de52d997329c006b062701
Td (on/off) @ 25°C:7e885b4e30aca01872a5901e01e7071f
Test Condition:0ca8bf799edf6f61c993e0a4e4659d04
Reverse Recovery Time (trr):69791ba1412baffd2ce5060051d160e3
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:a37ad9863329afbf5b7bab5645143153
Supplier Device Package:22dc43ae706bb865bdc0155a3b19a2bf
In Stock: 0
Stock:
0 Can Ship Immediately
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