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See Product Specifications
| номер части: | BCR 35PN H6327 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Производитель: | Infineon Technologies |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 7ba1f6ec7f544456008433cc373dff5d |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Resistor - Base (R1): | df689bcc7f60ca8585c12872d7bd237a |
| Resistor - Emitter Base (R2): | d80113e8d6286cadac92afe87493ba31 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 90cc0b7979f5009fe580deed29efd48b |
| Vce Saturation (Max) @ Ib, Ic: | a3882f52b90ab7e1e720caf27d4ee908 |
| Current - Collector Cutoff (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| Frequency - Transition: | fca8e69359c730f0d4f95032f39ff790 |
| Power - Max: | 0b1bfd7f8dffceeb71cf7e9b7e5c5146 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 8ec61d1c087ce35834a0d8ee1d8c159f |
| Supplier Device Package: | 99416fce70ec716d552dd14a517b8d49 |
