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See Product Specifications
| номер части: | BGB 540 E6327 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | 9b0d56c9236c5db5fbef63663a27f756 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Noise Figure (dB Typ @ f): | 639b5aad63713aaf4226ef70d7eafffd |
| Gain: | 96b3b3ca3427a1c3db56f3fc76b89c7b |
| Power - Max: | 0f4495877f5726648fca649dd8234675 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 336d5ebc5436534e61d16e63ddfca327 |
| Current - Collector (Ic) (Max): | 8557be76fb915951fd14114511d99c34 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | a855c364a8dbd6d0fe3b0b0928254d58 |
| Supplier Device Package: | 00b6737bf687b8bcee7589022e9410a1 |
