BSC082N10LSGATMA1

BSC082N10LSGATMA1

Images are for reference only
See Product Specifications

BSC082N10LSGATMA1
Описание:
MOSFET N-CH 100V 13.8A 8TDSON
Упаковка:
Tape & Reel (TR)
Datasheet:
BSC082N10LSGATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BSC082N10LSGATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:a98c7ec8106cf16aced8afc464bc6bdf
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:f855e353926429b25e067946d86d7020
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:485169f11f429fbeb50dada0329df4c2
Vgs(th) (Max) @ Id:d1c26aa5184ef31de16f79b218a8f878
Gate Charge (Qg) (Max) @ Vgs:d9dcc8e55169cd7dc53469a54d88c070
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:8743b6e3f737adf2c498f66e9a105d0d
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ef63d5ff1af8219757fbcf5bac5790d9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:9e13d66090ab3790bb627f0a0d011917
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SI3499DV-T1-GE3
SI3499DV-T1-GE3
Vishay Siliconix
MOSFET P-CH 8V 5.3A 6TSOP
RFP2P08
RFP2P08
Harris Corporation
P-CHANNEL POWER MOSFET
IRFU330BTU
IRFU330BTU
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
2N7002AQ-7
2N7002AQ-7
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
SI7172DP-T1-GE3
SI7172DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 200V 25A PPAK SO-8
RM3401
RM3401
Rectron USA
MOSFET P-CHANNEL 30V 4.2A SOT23
DMP2007UFG-13
DMP2007UFG-13
Diodes Incorporated
MOSFET P-CH 20V 18A PWRDI3333
STF7N60DM2
STF7N60DM2
STMicroelectronics
MOSFET N-CH 600V 6A TO220FP
DMNH6042SPS-13
DMNH6042SPS-13
Diodes Incorporated
MOSFET N-CH 60V 24A PWRDI5060-8
FCH060N80-F155
FCH060N80-F155
onsemi
MOSFET N-CH 800V 56A TO247
G08P06D3
G08P06D3
Goford Semiconductor
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
ZXMP10A18K
ZXMP10A18K
Diodes Incorporated
MOSFET P-CH 100V 3.8A TO252-3
Вас также может заинтересовать
IPP028N08N3GHKSA1
IPP028N08N3GHKSA1
Infineon Technologies
N-CHANNEL POWER MOSFET
IRLR8503TRPBF
IRLR8503TRPBF
Infineon Technologies
MOSFET N-CH 30V 44A DPAK
SPP12N50C3XKSA1
SPP12N50C3XKSA1
Infineon Technologies
LOW POWER_LEGACY
IKY40N120CS6XKSA1
IKY40N120CS6XKSA1
Infineon Technologies
IGBT TRENCH/FS 1200V 80A TO247
TDA4863GXUMA2
TDA4863GXUMA2
Infineon Technologies
IC PFC CTRLR DCM 8DSO
CY8C4145AXI-S433
CY8C4145AXI-S433
Infineon Technologies
IC MCU 32BIT 32KB FLASH 44TQFP
MB91F487PF-G-N9E1
MB91F487PF-G-N9E1
Infineon Technologies
IC ANALOG
CY7C1019D-10VXI
CY7C1019D-10VXI
Infineon Technologies
IC SRAM 1MBIT PARALLEL 32SOJ
S29GL128S90FHSS40
S29GL128S90FHSS40
Infineon Technologies
IC FLASH 128MBIT PARALLEL 64FBGA
S29GL01GT10FHI013
S29GL01GT10FHI013
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA
CY7C12681KV18-400BZXC
CY7C12681KV18-400BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY95010PMC-G-109E1
CY95010PMC-G-109E1
Infineon Technologies
IC MCU FLASH QFN