BSC082N10LSGATMA1

BSC082N10LSGATMA1

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BSC082N10LSGATMA1
Описание:
MOSFET N-CH 100V 13.8A 8TDSON
Упаковка:
Tape & Reel (TR)
Datasheet:
BSC082N10LSGATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BSC082N10LSGATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:a98c7ec8106cf16aced8afc464bc6bdf
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:f855e353926429b25e067946d86d7020
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:485169f11f429fbeb50dada0329df4c2
Vgs(th) (Max) @ Id:d1c26aa5184ef31de16f79b218a8f878
Gate Charge (Qg) (Max) @ Vgs:d9dcc8e55169cd7dc53469a54d88c070
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:8743b6e3f737adf2c498f66e9a105d0d
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ef63d5ff1af8219757fbcf5bac5790d9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:9e13d66090ab3790bb627f0a0d011917
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
In Stock: 0
Stock:
0 Can Ship Immediately
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