BSC0902NSIATMA1

BSC0902NSIATMA1

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BSC0902NSIATMA1
Описание:
MOSFET N-CH 30V 23A/100A TDSON
Упаковка:
Tape & Reel (TR)
Datasheet:
BSC0902NSIATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BSC0902NSIATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:a7f6a2a1f6fca49322934a5225c4e47d
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:3eee2b9ec0236b96020cf038a415794e
Vgs(th) (Max) @ Id:494b5c197e0b4e97f73d2760b3187d8f
Gate Charge (Qg) (Max) @ Vgs:f1d4411c14a38876d735f24f8437b43a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:703c2c763ade070b9c442c91194e194f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):d29a7dad9e3974c07a88a0ff8208b59f
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:9050a02eb11ee13ffecaf96ec4bf631e
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
In Stock: 8312
Stock:
8312 Can Ship Immediately
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