BSC091N03MSCGATMA1

BSC091N03MSCGATMA1

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BSC091N03MSCGATMA1
Описание:
POWER FIELD-EFFECT TRANSISTOR, 1
Упаковка:
Bulk
Datasheet:
BSC091N03MSCGATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BSC091N03MSCGATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:92a6cc11e8aaef45b966249bf4c65faf
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:26ed1a9832107d1da98d727ea49b43ae
Vgs(th) (Max) @ Id:47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:0dd58e464fbd9aa4ecb11445a1cff0fc
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:703c2c763ade070b9c442c91194e194f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9e5c50b81f9535bce68cfdc909b16d82
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:9050a02eb11ee13ffecaf96ec4bf631e
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
In Stock: 24335
Stock:
24335 Can Ship Immediately
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