BSC109N10NS3GATMA1

BSC109N10NS3GATMA1

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BSC109N10NS3GATMA1
Описание:
MOSFET N-CH 100V 63A TDSON-8-1
Упаковка:
Tape & Reel (TR)
Datasheet:
BSC109N10NS3GATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BSC109N10NS3GATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:b70b8e0eae6cc428a66dccb2d93c08df
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:32c22e729a6a3c6916b2769cfff97fe4
Vgs(th) (Max) @ Id:4dab2806e045e6da6bd7a5eef188af07
Gate Charge (Qg) (Max) @ Vgs:c4c0c60e6988bb99695980ffd0c06910
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c426f391ee6caee9eaaad070f1d2e67d
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):44b670c085128b792b06ef64b5c30aa8
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:9e13d66090ab3790bb627f0a0d011917
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
In Stock: 2076
Stock:
2076 Can Ship Immediately
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