BSC900N20NS3GATMA1

BSC900N20NS3GATMA1

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BSC900N20NS3GATMA1
Описание:
MOSFET N-CH 200V 15.2A TDSON-8
Упаковка:
Tape & Reel (TR)
Datasheet:
BSC900N20NS3GATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BSC900N20NS3GATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:69135c17e881173fbd6816aa456b8751
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:857ef723bbe5029fde88525121c7b293
Vgs(th) (Max) @ Id:35fbffeaa96a5f954a6a2a2ae5cbe5e7
Gate Charge (Qg) (Max) @ Vgs:7a8ca86f1f8e2b5c6a6cb8f7f455dff1
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:67eff014cd8d3c9ca6d578e6dac68fb8
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):e6115e6b64f7d623eb1f668cebc67c58
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:91323470304be5bb8b6681772abff13d
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
In Stock: 0
Stock:
0 Can Ship Immediately
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