BSG0810NDIATMA1

BSG0810NDIATMA1

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BSG0810NDIATMA1
Описание:
MOSFET 2N-CH 25V 19A/39A 8TISON
Упаковка:
Tape & Reel (TR)
Datasheet:
BSG0810NDIATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BSG0810NDIATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:c3f6d888a17cbb4436c8ee55b14a22fb
FET Feature:045069990a7738754604a796ec7c65cf
Drain to Source Voltage (Vdss):f798c545366cec61023a80cb46996128
Current - Continuous Drain (Id) @ 25°C:034cec4ed98f3c8afa7d27466ed669a1
Rds On (Max) @ Id, Vgs:710e2cf7e51b3681116e145bcab88864
Vgs(th) (Max) @ Id:47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:87a8cd1cecf1216a2d1af55dfe5c3f1b
Input Capacitance (Ciss) (Max) @ Vds:35f3e214faeb3d6263e30e88b8cc58b8
Power - Max:75aeae955e83b4d5a3205fdd9fb9b6ea
Operating Temperature:9ec027450d7356994b9abb96d572f5b0
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
Supplier Device Package:9319d2c6f383e14d877528a2990ea85c
In Stock: 4100
Stock:
4100 Can Ship Immediately
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