BSM50GD120DN2E3226BOSA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

IGBT MOD 1200V 50A 350W

Упаковка:

Tray

Datasheet:

BSM50GD120DN2E3226BOSA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BSM50GD120DN2E3226BOSA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Modules
Производитель:	Infineon Technologies
Упаковка:	Tray
Product Status:	a98c7ec8106cf16aced8afc464bc6bdf
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Configuration:	bb19530c2e647efa9597891a2071629a
Voltage - Collector Emitter Breakdown (Max):	edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):	80048aebe005b9413929a11bba83f563
Power - Max:	4f1fd714c189e6abfaf50e16d48c8c09
Vce(on) (Max) @ Vge, Ic:	15e10ff7b9eeaf91e06057e63a51419b
Current - Collector Cutoff (Max):	3fcea8972184a62a3c429fabfb1122c7
Input Capacitance (Cies) @ Vce:	e628aba63f4e92c0580aa4d300ce2957
Input:	eb6d8ae6f20283755b339c0dc273988b
NTC Thermistor:	bafd7322c6e97d25b6299b5d6fe8920b
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	678457b2fd6f368ccd41b6654ad866df
Package / Case:	e55f75a29310d7b60f7ac1d390c8ae42
Supplier Device Package:	e55f75a29310d7b60f7ac1d390c8ae42