DF200R12W1H3B27BOMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

IGBT MOD 1200V 30A 375W

Упаковка:

Bulk

Datasheet:

DF200R12W1H3B27BOMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	DF200R12W1H3B27BOMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Modules
Производитель:	Infineon Technologies
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Configuration:	71264939cba8b5daef1945d404523fe1
Voltage - Collector Emitter Breakdown (Max):	edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):	e5e40f3fe57770f170a10089997a057e
Power - Max:	393c29d6e158c762f26956555c0d1a45
Vce(on) (Max) @ Vge, Ic:	bcd28f8242de7d053a1a0e422c47f62e
Current - Collector Cutoff (Max):	3fcea8972184a62a3c429fabfb1122c7
Input Capacitance (Cies) @ Vce:	c862377737865660ba2a6b38c6170938
Input:	eb6d8ae6f20283755b339c0dc273988b
NTC Thermistor:	93cba07454f06a4a960172bbd6e2a435
Operating Temperature:	628c93cb578f4289de8fa3e2e2431cc2
Mounting Type:	678457b2fd6f368ccd41b6654ad866df
Package / Case:	e55f75a29310d7b60f7ac1d390c8ae42
Supplier Device Package:	e55f75a29310d7b60f7ac1d390c8ae42