IAUC26N10S5L245ATMA1

Images are for reference only
See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET_(75V 120V( PG-TDSON-8

Упаковка:

Tape & Reel (TR)

Datasheet:

IAUC26N10S5L245ATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IAUC26N10S5L245ATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	208d63fa64a55bf1756c1d09e20e3bd4
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	dc20a8ef00f31cd4f9d77952ffb0c573
Vgs(th) (Max) @ Id:	fba52b9da8f082e01d7ab9b5490e648f
Gate Charge (Qg) (Max) @ Vgs:	db83709cc1aa640e30cdddd177064057
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	6a9a8c5baa480c1142566ddaf328d1f8
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	2aa0e4b96ebad01dba346ba12d8321e6
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	5ce5b151ef886dc2457ccff137582173
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b